NSVMMUN2237LT1G Allicdata Electronics
Allicdata Part #:

NSVMMUN2237LT1G-ND

Manufacturer Part#:

NSVMMUN2237LT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 246MW SOT23
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSVMMUN2237LT1G datasheetNSVMMUN2237LT1G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.03784
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The NSVMMUN2237LT1G is a type of transistor commonly used in electronics. It is categorized as a single bipolar junction transistor (BJT) which is pre-biased. This type of transistor can be found in many types of electronic circuits, from amplifiers and receivers to digital logic circuits. The NSVMMUN2237LT1G offers a number of different benefits, including its high input impedance, high current gain, and low power consumption. It is also an easy to use and reliable device, making it an attractive option for a range of devices.

Because this device is pre-biased, it offers a significant advantage over other transistors, as the current through the device and the voltage (VCE) required to turn it on are already known. This simplifies the design process and can save time, effort, and money. Furthermore, the NSVMMUN2237LT1G has an input impedance that is relatively high, meaning that fewer components are required for the circuit to operate. This can reduce power consumption and also result in less noise being generated.

In terms of its working principle, the NSVMMUN2237LT1G is a bipolar junction transistor which means it operates in three stages. The first stage is known as the cut-off stage and refers to the point at which the device is switched off, meaning current will not flow through it. In this state, the base-emitter junction is reversed biased and no current flows. This is followed by the active region, where the device is switched on and current flows through it. The device then enters the saturation stage, where the base-emitter junction is forward biased and current flows through it.

In terms of its primary application fields, the NSVMMUN2237LT1G is used in a variety of contexts. It is commonly used as a switch in digital logic circuits, as well as in amplifiers and receivers. It is also used in power conversion equipment, such as dc-dc converters and inverters, as well as in motors, such as stepper motors. In terms of its other application fields, the NSVMMUN2237LT1G can be found in gadgets such as handheld gaming devices, remote-control toys, and portable CD players.

Overall, the NSVMMUN2237LT1G is a reliable, easy to use, and power efficient transistor commonly used in many types of electronic devices. By being pre-biased, it simplifies the design process and can reduce power consumption, while its high input impedance allows the circuit to operate with fewer components. Furthermore, the device can be found in a range of devices and gadgets, from digital logic circuits, receivers and amplifiers, to motors and handheld devices.

The specific data is subject to PDF, and the above content is for reference

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