Allicdata Part #: | NSVMUN2233T1G-ND |
Manufacturer Part#: |
NSVMUN2233T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 230MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | NSVMUN2233T1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03744 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59-3 |
Base Part Number: | MUN2233 |
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A NSVMUN2233T1G is a pre-biased, single bipolar junction transistor (BJT). It is designed for use in a variety of applications including motor control, switching and audio applications. The transistor features excellent gain stability, wide operating temperature range and good thermal stability. This makes it well suited for applications where high reliability and dependability are required.
A pre-biased, single BJT has three different terminals. The collector, base and emitter are connected via individual pins on the transistor. The collector is the input terminal, receiving a voltage or current signal. The emitter is the output terminal, where a voltage or current signal is outputted. The base terminal acts as a gate and is used to control the current flow in the other two terminals. A single BJT has a relatively simple structure and it is often used when an electrical signal needs to be amplified or switched.
The NSVMUN2233T1G is an NPN type of BJT, which has a higher current gain than an equivalent PNP type. It also has a low base-emitter voltage drop of 0.7V, meaning it can switch faster than a normal NPN transistor. The transistor is designed for a variety of applications, and its features make it ideal for controlling motors by switching on or off the power supply, as well as audio applications where the signal needs to be amplified.
The working principle of the NSVMUN2233T1G relies on the control of the current flow in the collector-emitter terminals by the base-emitter junction. When the voltage at the base is higher than the voltage at the emitter, current begins to flow from the base to the collector. This creates an amplification of current in the collector-emitter terminals, which is used to switch on or off the power supply in motor control applications. In audio applications, the amplification of current creates an increase in signal level, which is used to amplify the audio signal.
The NSVMUN2233T1G is a versatile, single pre-biased BJT. It is well suited for applications where high reliability is required, such as motor control and audio amplification. The transistor\'s features, including its low base-emitter voltage drop and high current gain, make it ideal for these applications. The transistor works by controlling the current flow in the collector-emitter terminals by the base-emitter junction, allowing for an amplification of current which can be used for motor control or audio applications.
The specific data is subject to PDF, and the above content is for reference
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