NSVMUN5312DW1T2G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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The NSVMUN5312DW1T2G is an array of N-channel enhancement-mode vertical double-diffused MOSFET(VDSMOS) transistors which have been pre-biased and have been specifically designed for low-noise, inverting amplifiers and linear applications. The array is composed of an N-channel MOSFET with a pre-biased source-to-drain voltage of 3.3V. The array is constructed using an advanced VDSMOS process which has low device threshold voltage and high thermal impedance. The array has a low noise figure, low leakage current, and excellent output voltage regulation. This array of transistors is used in a variety of applications including power management, switching power converters, audio circuits, motor control, and consumer electronics. In power management applications, the array can be used to control the voltage and current of a power supply by providing accurate and efficient switching. In switching power converters, the array can be used to regulate the output current and power delivery. In audio circuits, the array can be used to amplify or reduce signals, or to provide an adjustable gain. In motor control applications, the array can be used to regulate the speed and torque of the motor. Finally, the array can be used in consumer electronic applications for controlling various devices such as televisions, game consoles, and home appliances. The working principle of the NSVMUN5312DW1T2G array is based on the effective drive current multiplied by the effective gate-to-source resistance. In this way, the drain current is governed by the total effective gate-to-source voltage. The effective gate-to-source resistance is pre-biased, so the voltage across the N-channel MOSFET can be accurately adjusted by varying the pre-bias voltage. The pre-bias voltage can also be adjusted to reduce of the on-resistance of the array, allowing for greater efficiency and power savings. The N-channel MOSFETs used in this array have low leakage current and low noise figures, which make them ideal for high-frequency applications. The low leakage current ensures that the MOSFETs will not contribute to any distortion of the audio signal. The low noise figure ensures that the array will not add any noise to the signal it is amplifying or reducing. The NSVMUN5312DW1T2G array is designed to be capable of functioning in temperatures from -40°C to 125°C and is optimized for applications that operate at high frequencies. The NSVMUN5312DW1T2G array has been specifically designed for low-noise, inverting amplifiers and linear applications. It is an excellent choice for high-frequency, precision applications where low noise and distortion is essential. This array provides excellent output voltage regulation, low leakage current, and low thermal resistance. Its pre-biased source-to-drain voltage makes it an ideal choice for power management, audio circuits, motor control, and consumer electronic applications.

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