NTJS3151PT2G Allicdata Electronics
Allicdata Part #:

NTJS3151PT2G-ND

Manufacturer Part#:

NTJS3151PT2G

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 12V 2.7A SOT-363
More Detail: P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount S...
DataSheet: NTJS3151PT2G datasheetNTJS3151PT2G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07890
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: 400mV @ 100µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTJS3151PT2G is a semiconductor device that uses junction field-effect technology to control electrical signals. It is used to convert a low-voltage input signal into a much higher voltage output signal. The device has two terminals: the gate and the drain. The drain terminal is connected to the output power supply, while the gate terminal is where the input signal is sent. The gate terminal can be a resistor, a capacitor, or an integrated circuit. The gate terminal controls the transistor\'s internal resistance, allowing it to act as a switch or amplifier.The NTJS3151PT2G is designed for analog applications that require high gain and high voltage control over a smaller input signal. It is particularly useful for controlling LEDs, relays, and other power-driven components. Because of its relatively low cost, small form factor, and high performance, the NTJS3151PT2G is an ideal choice for a wide variety of applications in the automotive, medical, and security industries.The NTJS3151PT2G is a N–channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a three-terminal device that is composed of a semiconductor material such as silicon, gallium arsenide, or indium phosphorus, that can act as an amplifier, switch, transducer, or buffer. A MOSFET operates on the principle of electron control and electric field-effect.The NTJS3151PT2G is an enhancement-mode device, meaning that it can be turned on with a positive gate voltage and is fully on with a voltage above the threshold voltage. It differs from the depletion-mode MOSFET, which requires a negative gate voltage to turn the device on.The major features of the NTJS3151PT2G are its low input capacitance, low input leakage, high breakdown voltage, and low power consumption. In addition, it features a high drain-source breakdown voltage, fast switching speeds, and low Power-On-State Resistance. These features make the NTJS3151PT2G an ideal choice for applications such as high-voltage power converters, motor and relay control, and high-frequency logic gates.The NTJS3151PT2G can be used in a variety of applications, including motorized device and relay control, automotive load switching, high-voltage power converters, and high-frequency logic gates. Because of its fast switching speeds, low on-state resistance, and high voltage breakdown, it is also suitable for use in battery-powered devices, where power conservation is of particular importance. Furthermore, due to its small form factor, the device can be used in applications where size and weight are critical factors.In conclusion, the NTJS3151PT2G is a semiconductor device which is often used in a range of analog applications. It features excellent voltage control, high gain, low input capacitance, and low input leakage. It is well suited for use in automotive, medical, and security industries and can be used to control motors and relays, high-voltage power converters, and high-frequency logic gates. Its small form factor and low power consumption also make it suitable for use in battery powered devices.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NTJS" Included word is 15
Part Number Manufacturer Price Quantity Description
NTJS4405NT1G ON Semicondu... -- 1000 MOSFET N-CH 25V 1A SOT-36...
NTJS4151PT1 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 20V 3.3A SOT-...
NTJS4160NT1G ON Semicondu... 0.0 $ 1000 MOSFET N-CH 30V 1.8A SC88...
NTJS3151PT2 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 12V 2.7A SOT-...
NTJS3157NT2 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 20V 3.2A SOT-...
NTJS3157NT4 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 20V 3.2A SOT-...
NTJS3157NT4G ON Semicondu... 0.0 $ 1000 MOSFET N-CH 20V 3.2A SOT-...
NTJS4405NT1 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 25V 1A SOT-36...
NTJS4405NT4 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 25V 1A SOT-36...
NTJS4405NT4G ON Semicondu... -- 1000 MOSFET N-CH 25V 1A SOT-36...
NTJS4151PT1G ON Semicondu... 0.08 $ 1000 MOSFET P-CH 20V 3.3A SC-8...
NTJS3151PT2G ON Semicondu... 0.09 $ 1000 MOSFET P-CH 12V 2.7A SOT-...
NTJS3157NT2G ON Semicondu... 0.0 $ 1000 MOSFET N-CH 20V 3.2A SOT-...
NTJS3151PT1G ON Semicondu... -- 1000 MOSFET P-CH 12V 2.7A SOT-...
NTJS3157NT1G ON Semicondu... -- 27000 MOSFET N-CH 20V 3.2A SOT-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics