Allicdata Part #: | NTJS3151PT2G-ND |
Manufacturer Part#: |
NTJS3151PT2G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 2.7A SOT-363 |
More Detail: | P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | NTJS3151PT2G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07890 |
Vgs(th) (Max) @ Id: | 400mV @ 100µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 12V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTJS3151PT2G is a semiconductor device that uses junction field-effect technology to control electrical signals. It is used to convert a low-voltage input signal into a much higher voltage output signal. The device has two terminals: the gate and the drain. The drain terminal is connected to the output power supply, while the gate terminal is where the input signal is sent. The gate terminal can be a resistor, a capacitor, or an integrated circuit. The gate terminal controls the transistor\'s internal resistance, allowing it to act as a switch or amplifier.The NTJS3151PT2G is designed for analog applications that require high gain and high voltage control over a smaller input signal. It is particularly useful for controlling LEDs, relays, and other power-driven components. Because of its relatively low cost, small form factor, and high performance, the NTJS3151PT2G is an ideal choice for a wide variety of applications in the automotive, medical, and security industries.The NTJS3151PT2G is a N–channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a three-terminal device that is composed of a semiconductor material such as silicon, gallium arsenide, or indium phosphorus, that can act as an amplifier, switch, transducer, or buffer. A MOSFET operates on the principle of electron control and electric field-effect.The NTJS3151PT2G is an enhancement-mode device, meaning that it can be turned on with a positive gate voltage and is fully on with a voltage above the threshold voltage. It differs from the depletion-mode MOSFET, which requires a negative gate voltage to turn the device on.The major features of the NTJS3151PT2G are its low input capacitance, low input leakage, high breakdown voltage, and low power consumption. In addition, it features a high drain-source breakdown voltage, fast switching speeds, and low Power-On-State Resistance. These features make the NTJS3151PT2G an ideal choice for applications such as high-voltage power converters, motor and relay control, and high-frequency logic gates.The NTJS3151PT2G can be used in a variety of applications, including motorized device and relay control, automotive load switching, high-voltage power converters, and high-frequency logic gates. Because of its fast switching speeds, low on-state resistance, and high voltage breakdown, it is also suitable for use in battery-powered devices, where power conservation is of particular importance. Furthermore, due to its small form factor, the device can be used in applications where size and weight are critical factors.In conclusion, the NTJS3151PT2G is a semiconductor device which is often used in a range of analog applications. It features excellent voltage control, high gain, low input capacitance, and low input leakage. It is well suited for use in automotive, medical, and security industries and can be used to control motors and relays, high-voltage power converters, and high-frequency logic gates. Its small form factor and low power consumption also make it suitable for use in battery powered devices.
The specific data is subject to PDF, and the above content is for reference
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