| Allicdata Part #: | NTJS3157NT4-ND |
| Manufacturer Part#: |
NTJS3157NT4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 3.2A SOT-363 |
| More Detail: | N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-8... |
| DataSheet: |  NTJS3157NT4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 400mV @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NTJS3157NT4 is a single field-effect transistor (FET) for use in applications which require power amplification, voltage or current switching, or both. FETs are a type of transistor, and the NTJS3157NT4 is a special type known as a metal-oxide semiconductor field-effect transistor (MOSFET).
A FET is a transistor which uses voltage or electric fields to control current. FETs provide low-frequency input impedances, high-frequency response, and a versatile power supply ability. In contrast to a bipolar transistor, FETs have fewer components and are highly efficient.
The NTJS3157NT4 is a single MOSFET which consists of a single buried layer semiconductor architecture. It is suitable for a wide variety of applications such as high-power amplifiers, current sensing, and voltage switching. The NTJS3157NT4 is also designed for use in applications where power or signal isolation is required.
The working principle of the NTJS3157NT4 is relatively straightforward. When a voltage is applied to the gate, the current through the channel increases. The amount of current which can be conducted is determined by the gate voltage, the channel resistance, and the saturation voltage of the FET. The device is also designed to ensure optimal performance over temperature and voltage.
The NTJS3157NT4 is a versatile MOSFET that is suitable for a variety of application fields. It can be used in power amplifiers and amplifiers for audio, video, and home products. It can also be used in voltage and current switching applications, as well as interfaces to logic circuits and linear circuits. This single MOSFET is also suitable for use in smart home and electric vehicle systems.
The NTJS3157NT4 is a reliable, efficient, and cost-effective single MOSFET. It is designed to achieve maximum performance under temperature and voltage, and is capable of operating in a wide range of applications. This single MOSFET is an excellent choice for both experienced and novice engineers who need a powerful and versatile power device for their project.
The specific data is subject to PDF, and the above content is for reference
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