| Allicdata Part #: | NTJS3157NT2G-ND |
| Manufacturer Part#: |
NTJS3157NT2G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 3.2A SOT-363 |
| More Detail: | N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-8... |
| DataSheet: |  NTJS3157NT2G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The NTJS3157NT2G is a single-channel enhancement mode Field Effect Transistor (FET) integrated circuit, designed for regulator and load switching applications. It is characterized by a low-level on-state resistance, reverse transfer capacitance, low power loss at high frequency, low distortion, and a wide operating temperature range.The NTJS3157NT2G is designed to be used in a variety of applications, such as power supplies, motor and load control, lighting, and voltage regulation. It can be used to switch high currents with low frequency switching ripple and is suitable for RF applications. The device also provides a wide operating range, making it suitable for a variety of applications.The working principle of the NTJS3157NT2G is based on a single-channel MOSFET integrated circuit. The device works by applying a voltage across its gate and drain. When a voltage is applied, the electrons from the gate region migrate to the drain region, which causes the channel between the two points to become conductive. This conductive channel allows current to flow between the gate and drain, allowing the device to be used as a switch, transistor, amplifier, or voltage regulator.The NTJS3157NT2G is comprised of two terminals, the gate and drain. A voltage is applied to the gate terminal, which causes the transistor to turn on. As the voltage increases, the channel between the gate and the drain becomes increasingly conducting and this allows current to flow through the device. In order to turn the transistor off, the voltage on the gate must be reduced.The NTJS3157NT2G is capable of handling high currents with low frequency switching ripple. The device is also ideal for applications in high frequency switching, due to its low power loss. Additionally, the transistor has a low on-state resistance, which reduces power dissipation and allows for more efficient heat dissipation.The NTJS3157NT2G is a single-channel MOSFET device and is suitable for high-frequency switching applications. The device has a low-level on-state resistance and reverse transfer capacitance, allowing for improved performance and efficient power dissipation. Additionally, the device has a wide operating temperature range, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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