Allicdata Part #: | NTJS4405NT4G-ND |
Manufacturer Part#: |
NTJS4405NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 1A SOT-363 |
More Detail: | N-Channel 25V 1A (Ta) 630mW (Ta) Surface Mount SC-... |
DataSheet: | NTJS4405NT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 630mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTJS4405NT4G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) providing an ultra-low on-state resistance and a fast switch-on and switch-off capability. It is used in various high-current applications and is suitable for battery-powered circuits, lighting systems, and other power management applications. It has a better power handling capability than discrete MOSFETs and offers the advantage of being significantly easier to install and program than their discrete counterparts. It is typically used in high-performance radio frequency (RF) applications and is available in a variety of package types.
NTJS4405NT4G Application Field
The NTJS4405NT4G MOSFET can be used in a number of different applications, including high speed switching, motor control, and load switching. It is typically used in power management applications and is commonly used to switch multiple devices on and off. It can also be used in DC-DC converters, LED backlighting, over-current protection circuits, and a variety of other applications. It is low power and cost efficient, making it an ideal choice for battery powered circuits and lighting systems.
NTJS4405NT4G Working Principle
The NTJS4405NT4G is a N-channel MOSFET device. It is built using a vertical double-diffused MOS (VDMOS) structure, which yields an ultra-low on-state resistance and a fast switch-on and switch-off capability. It is controlled by an applied voltage between the source and the gate terminal. When the voltage between the source and the gate is lower than the threshold voltage, the channel is in an off-state, and no current flows through the device. When the voltage between the source and gate reaches the threshold voltage, the channel is in an on-state, and a large current can flow through the device.
The NTJS4405NT4G MOSFET has an extremely low on-state resistance, meaning that it can switch large currents in a very short amount of time. This makes it ideal for applications like motor controls and high-performance RF systems. It also has a very fast switch-on and switch-off time, making it suitable for applications that require a fast response time. However, it also means that it is sensitive to switching noise, so it should be used in applications that are not sensitive to such noise.
The NTJS4405NT4G is an ideal choice for high-current applications due to its ultra-low on-state resistance and fast switch-on and switch-off times. It is also low power and cost efficient, making it a good choice for battery-powered circuits and lighting systems, as well as other power management applications.
The specific data is subject to PDF, and the above content is for reference
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