NTJS3157NT2 Allicdata Electronics
Allicdata Part #:

NTJS3157NT2-ND

Manufacturer Part#:

NTJS3157NT2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 3.2A SOT-363
More Detail: N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-8...
DataSheet: NTJS3157NT2 datasheetNTJS3157NT2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 400mV @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTJS3157NT2 is a single-gate, N-channel Enhancement Mode MOSFET that is produced by NXP Semiconductors. This transistor is part of a family of transistors known as FETs, or Field Effect Transistors. FETs are used to amplify or switch electrical signals, and the NTJS3157NT2 is part of a class of transistors that are used to do both.

The NTJS3157NT2 has its drain connected to its gate through an insulated gate, called a gate oxide. This gate oxide is what makes FETs different from other types of transistors, as it forms a barrier between the gate and the drain. As a result, any current passing through the gate does not directly affect the current flowing through the drain.

The main function of the NTJS3157NT2 is to control the flow of current from the drain to the source. When the gate is in its negative state, the transistor will be in its Off position, and no current will be able to flow from the drain to the source. When the gate is in its positive state, the transistor will be in its On position, and current will be able to flow from the drain to the source. This makes it ideal for use as a switch, where it can be turned on and off with the application of a voltage.

The NTJS3157NT2 is also used for signal amplification. As with other FETs, it has high input impedance, which makes it ideal for amplifying low-level signals. It also has low on-resistance, making it ideal for power amplification. This makes it suitable for use in various applications, such as radio-frequency (RF) amplifiers, audio amplifiers, and amplifier stages in power supply circuits.

In addition to its application in signal amplification, the NTJS3157NT2 can also be used as a linear regulator. By controlling the gate voltage, the MOSFET can be used to regulate the voltage across its drain and source terminals. This makes it ideal for use in voltage regulator circuits, where it can be used to control the output voltage of a system.

Overall, the NTJS3157NT2 is a versatile transistor that has a variety of uses in electronic circuits. Its ability to switch between its On and Off positions quickly makes it ideal for use as a switch, and its high input impedance makes it suitable for signal amplification. Its low on-resistance further makes it ideal for power amplification, and its ability to regulate voltages makes it suitable for use as a linear regulator. As a result, the NTJS3157NT2 is a very useful component that can be used in a wide range of circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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