Allicdata Part #: | NTJS4405NT4-ND |
Manufacturer Part#: |
NTJS4405NT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 1A SOT-363 |
More Detail: | N-Channel 25V 1A (Ta) 630mW (Ta) Surface Mount SC-... |
DataSheet: | NTJS4405NT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 630mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTJS4405NT4 is a single-channel junction field-effect transistor (JFET). The device is constructed with a single N-channel enhancement-mode JFET, encapsulated in a standard SOT-23 package. This device is ideal for use as a switch, an amplifier, an oscillator and a voltage regulator, as well as general purpose switching, low noise amplifier, electronic switching and low voltage analog signal conditioning applications.
A field-effect transistor (FET) is an electrical device that uses field-effect, or "voltage control", technology to control the conduction of current through a channel of either polarity, depending on the type of FET being used. FETs are unipolar devices, in which the current travels only in one direction and the current is controlled by a voltage applied to the gate.
The NTJS4405NT4 is based around an N-channel JFET, where the channel is created by the application of an appropriate electric field across the junction between a heavily doped N-type semiconductor and a lightly doped P-type semiconductor. The JFET works in the same way as a field-effect transistor, with the current passing through the channel being controlled by the voltage at the gate.
When a voltage of the same polarity as the majority carriers is applied to the gate terminal, it creates an electric field across the channel. This field produces an electric current, which is called the drain current. The gate voltage can be used to modify the voltage across the channel and thus, the drain current.
In this way, the gate can be used to control the drain current, allowing for precise control of the flow of current through the channel. The NTJS4405NT4 has a low maximum drain-to-source voltage of 6V, making it suitable for use in low voltage circuits. It also has a low on-resistance of 10 Ω, making it an ideal choice for applications requiring low power usage.
The NTJS4405NT4 can be used in a variety of applications due to its robust design and low voltage characteristics. It can be used as a switch in various circuits or as an amplifier or oscillator, or in low voltage analog signal conditioning applications, such as voltage regulation. The device is also ideal for use as a low noise amplifier due to its low maximum drain-to-source voltage and its low on-resistance.
The NTJS4405NT4 is a low cost and reliable solution for many low voltage analog applications, providing a multi-functional device in a single package. Its low maximum drain-to-source voltage makes it ideal for use in low voltage circuits, while its low on-resistance makes it an ideal choice for applications requiring low power usage.
The specific data is subject to PDF, and the above content is for reference
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