NTJS4151PT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTJS4151PT1G is a single N-channel MOSFET device designed for switching and amplifier applications. This compact, surface-mount device is designed to minimize on-state resistance while providing superior switching performance. Thanks to its low gate charge, this MOSFET provides fast switching times and can be used in a wide range of switching, linear and amplifier applications.

The MOSFET is composed of a single N-channel, vertical double-diffused MOS (VDMOS) structure, incorporating advanced mobile charge compensation circuitry that provides low gate charge and optimized performance for a wide range of load current and supply voltage variations. The gate oxide is engineered for very low capacitance and low power consumption, making it an ideal choice for portable applications that require low-power consumption.

For switching applications, the NTJS4151PT1G is suitable for use in gate drivers, power supply, AC-DC and DC-DC converter circuits, and automotive lighting. For linear applications, it can be used in high-voltage analog circuits, such as voltage multiplier, voltage regulator, and sound/audio amplifiers. It is also suitable for high-side and low-side switch applications.

In terms of its working principle, the NTJS4151PT1G is based on a three-terminal MOSFET. It has a gate, a source, and a drain. When the gate voltage increases, current begins to flow from the source and into the drain, via the channel formed by the MOSFET. This process is known as ‘turning on’ the MOSFET, and it results in an increase of the drain current. When the gate voltage decreases, the flow of current is reduced, and the transistor ‘turns off’. This process is controlled by the voltage applied to the gate terminal.

The NTJS4151PT1G is a low on-resistance, low gate charge MOSFET that offers increased efficiency compared to its predecessors. Its switching performance is enhanced by the proprietary, advanced mobile charge compensation technology. Thanks to the low capacitance, it reduces total power consumption and is ideally suited for portable applications.

In summary, the NTJS4151PT1G is an advanced single N-channel vertical double-diffused MOSFET, designed for switching and amplifier applications. It incorporates a low-capacitance gate oxide, low on-state resistance, and advanced mobile charge therapy. It is an ideal choice for portable applications, able to provide fast tracking, low power consumption, and excellent switching performance.

The specific data is subject to PDF, and the above content is for reference