| Allicdata Part #: | NTJS4151PT1OSCT-ND |
| Manufacturer Part#: |
NTJS4151PT1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 3.3A SOT-363 |
| More Detail: | P-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SC-8... |
| DataSheet: |  NTJS4151PT1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.3A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Cut Tape (CT) |
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NTJS4151PT1 is an enhancement-mode MOSFET made of GaN. It is designed to provide excellent performance with low losses and low noise in order to meet the requirements of many power supplies. It is a high performance, low loss and noise MOSFET.
The application field for this product is wide, including motor control, welding, solar power generation, battery chargers, regulators and storage systems, as well as other high power applications. It also offers solutions for power converters, such as DC/DC converters, AC/DC converters, and voltage regulators.
The working principle of NTJS4151PT1 is based on the principle of the gate-source depletion layer. The depletion layer is formed when the gate voltage is lower than the threshold voltage. When the gate voltage is higher than the threshold voltage, the depletion layer becomes depleted and a channel is formed. The current is then able to flow through the channel. The gain of the transistor is controlled by adjusting the gate voltage, and a higher voltage results in a higher gain.
The main characteristics of NTJS4151PT1 include excellent thermal conductivity and high current capability, with a low on-resistance, low gate charge, and low gate-source capacitance. It offers a low gate-source leakage current, a low gate threshold voltage, and a high power dissipation capability.
In conclusion, NTJS4151PT1 is an enhancement-mode MOSFET designed for high power applications. It offers excellent features and great performance, providing low losses and low noise solutions for motor control, welding, solar power generation, battery chargers, regulators and storage systems, and other high power applications. The working principle of this device is based on the principle of the gate-source depletion layer, and it offers excellent thermal conductivity, high current capability, and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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