NTZD3152PT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	NTZD3152P
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	250mW
Input Capacitance (Ciss) (Max) @ Vds:	175pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:	2.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	900 mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C:	430mA
Drain to Source Voltage (Vdss):	20V
FET Feature:	Standard
FET Type:	2 P-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTZD3152PT1G is a type of high-voltage N-channel depletion-mode TrenchFET® power MOSFET arrays. It is designed to be used in applications where high voltage operation, high switching current, low on-resistance, ease of use and low cost are the main feature requirements. The configuration of the NTZD3152PT1G is a common source transistor array that has been optimized for high voltage operation, making it suitable for use in applications such as DC-DC converters, LED lighting, power conditioning and low-voltage DC power supplies. The NTZD3152PT1G also features built-in ESD protection, making it more robust and reliable than many other MOSFET arrays. In addition to this, it offers good thermal performance and leakage current characteristics. In order to understand how the NTZD3152PT1G works, we must first look at how a transistor in general works. A transistor is essentially a switch; when current is present at the gate, or “base” of the transistor, the voltage at the drain (or collector) will be either increased (if it was low before) or decreased (if it was high). This is what is known as “switching”. The NTZD3152PT1G is an N-channel MOSFET array, meaning it has multiple N-channel MOSFETs in the same package. This allows for a higher switching current than a single transistor would be able to handle, as well as providing better thermal performance due to the reduced area and improved heat dissipation.The NTZD3152PT1G also has built-in ESD protection in the form of a diode between the gate and source terminal. This helps to protect the device against electrostatic discharge by providing a low-resistance path for the current.Now that we understand how a MOSFET works, let’s look at how the NTZD3152PT1G applies this property in various applications. As mentioned earlier, this device is well-suited to DC-DC converters, LED lighting, and low-voltage DC power supplies due to its high voltage operation, low on resistance, and current handling capabilities. However, the NTZD3152PT1G can be used for a variety of other purposes as well. For instance, it is also suitable for use in motor control applications, as its low on resistance and the ability to switch both high and low voltage signals makes it a good fit for controlling motors. In addition to this, the device is also a great choice for audio applications. This is because its low on resistance and the ability to switch a wide range of frequencies make it capable of producing very clean and clear audio signals. Finally, the NTZD3152PT1G can also be used in telecommunications, where it can be used to switch signals in high frequency circuits such as amplifiers and switches.To conclude, the NTZD3152PT1G is an excellent choice for applications where high voltage operation, high switching current, low on-resistance, ease of use and low cost are the main features required. The device offers good thermal performance and reliable ESD protection, making it a perfect choice for a variety of applications. In addition to this, the device’s low on resistance and the ability to switch high and low voltage signals make it suitable for motor control and audio applications, while its ability to switch signals in high frequency circuits make it an ideal choice for telecoms applications.

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