NTZD3154NT5G Discrete Semiconductor Products |
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Allicdata Part #: | NTZD3154NT5GOSTR-ND |
Manufacturer Part#: |
NTZD3154NT5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.54A SOT563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 540mA 250mW Su... |
DataSheet: | NTZD3154NT5G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | NTZD3154N |
Supplier Device Package: | SOT-563-6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 540mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 540mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTZD3154NT5G is a power MOSFET array. It is composed of double N-Channel enhancement type MOSFETs, allowing it to be used in both enhancement mode and depletion mode applications. The array has been designed for high frequency switching operations such as in DC-DC converters, transport applications, and low-side switching applications. The array is also useful for high side switching applications when combined with an appropriate driver circuit.
The optimal application field for the NTZD3154NT5G is in DC-DC converters, transport applications, and low-side switching applications, due to its high frequency switching characteristics. The array is able to work with a wide range of input voltages, making it suitable for a variety of different applications. The array can also be used with an appropriate driver circuit and the MOSFETs can be used in both enhancement and depletion mode applications.
The NTZD3154NT5G operates on the principle of field effect transistor (FET). FETs use an electric field to directly control one or more electrical signals. In this case, the MOSFETs are configured in an array, with two N-Channel MOSFETs connected in series. In enhancement mode, the MOSFETs operate by using the electric field to allow current to flow, while in depletion mode, the MOSFETs use the electric field to prevent current from flowing.
The NTZD3154NT5G is capable of switching times as low as 1.25ns and a maximum drain-source voltage of 20V. It can be used in a wide range of applications and has been designed with high frequency switching operations in mind. In addition, the array is able to withstand temperature ranges from -55°C to +150°C.
The NTZD3154NT5G is a powerful and versatile MOSFET array that is suitable for a diverse range of applications. It operates on the field effect transistor principles, allowing it to be used in both enhancement and depletion mode applications. Additionally, it is able to switch quickly and has resistant to temperature variations, making it suitable for use in a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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