NTZD3155CT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTZD3155CT1GOSTR-ND |
Manufacturer Part#: |
NTZD3155CT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V SOT-563 |
More Detail: | Mosfet Array N and P-Channel 20V 540mA, 430mA 250m... |
DataSheet: | NTZD3155CT1G Datasheet/PDF |
Quantity: | 277 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | NTZD3155C |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 540mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 540mA, 430mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTZD3155CT1G is a n-channel Enhancement Mode Field-Effect-Transistor (FET) that is part of a MOSFET array. It is very useful in many different applications in both custom and general electronics.
The NTZD3155CT1G is a logic level MOSFET, which means it can withstand a wide range of operating voltages. It is an enhancement mode device, meaning that it operates by increasing the voltage at one point and the current at another. This device is specially made to be able to switch large amounts of current and often does not require additional components like diodes or dedicated drivers.
The NTZD3155CT1G is especially useful in applications where high power is needed in a low-power environment. It is ideal for switching applications in desktop computers, as well as for power management in industrial and consumer electronics. It is also well suited for switched-mode power supplies, as well as for high-current applications such as DC motor drives. Additionally, the NTZD3155CT1G is used in high-speed digital signal applications such as pulse width modulation for controlling motors.
The NTZD3155CT1G is an integrated circuit, which means that it is made up of a series of transistors, diodes, and resistors that are all interconnected. This allows it to operate in a wide range of circumstances, and is extremely useful in a variety of electronic applications. The device is highly reliable and efficient, and is popular in both industrial and consumer applications.
The working principle of the NTZD3155CT1G is relatively simple. Like many transistors, it has a gate and a source. When a voltage is applied to the gate, it causes a large current to flow from the source to the drain. This current can then be used to control various external devices or circuits.
The NTZD3155CT1G is a part of an array, which simply means that it can be connected to other devices to create larger or multi-function circuits. This is extremely useful for applications where a number of devices need to be switched on and off in a precise and controlled way.
The NTZD3155CT1G is an excellent choice for applications where a reliable and efficient FET is needed. It is well suited to many different applications, and its array structure makes it very easy to control multiple devices and circuits. The device’s integrated design also allows it to be used in a wide range of circumstances, making it a highly versatile and reliable FET.
The specific data is subject to PDF, and the above content is for reference
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