NTZD3158PT1G

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NTZD3158PT1G belongs to transistors – FETs, MOSFETs – Arrays, specifically, it is a dual high voltage N-channel power MOSFET. It has an integrated driver IC and high voltage performance. So it can be used on applications such as solar power module switching, battery management, flyback converters and AC/DC adapters.

NTZD3158PT1G has a small size, high operating temperature and fast switching speed features, achieving higher integration and reliability. It is an excellent choice for medium current and high voltage applications due to its medium on-resistance and relatively low gate charge. In addition, the device also has a high dV/dt stress immunity, allowing it to handle a wide range of heavy-duty power switching tasks efficiently.

Key Features of NTZD3158PT1G

• High Voltage N-Channel Power MOSFET
• Low On-Resistance
• Low Gate Charge
• High dV/dt Stress Immunity
• Integrated Driver IC
• Compact Package
• Low Profile
• High Operating Temperature
• Fast Switching Speed

Typical Applications

• Solar power module switching
• Battery management
• Flyback converters
• AC/DC adapters

Working Principles

NTZD3158PT1G works on the principle of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It is an electronic device that is used to control the flow of electric current through a signal voltage. It is basically an electronically controlled switch that can be used to turn a circuit on or off, depending on the controller’s signal. It is usually used in DC circuits.

The Gate of the transistor is the control pin. When there is no voltage applied to the gate, the MOSFET is in its OFF state. No current can flow between the source and drain of the MOSFET when it is in an OFF state. However, when a voltage is applied to the gate, the MOSFET will be in its ON state. The current between the source and drain of the MOSFET is proportional to the voltage applied to the gate pin.

NTZD3158PT1G is an N-channel MOSFET, which means that the gate voltage should be of positive polarity and the drain should be at a higher voltage than the source. When a positive voltage is applied to the gate, it will attract electrons, which will create an inversion layer between the gate and the source and drain terminal. This inversion layer will cause the source and drain to be connected, which allows current to flow from the source to the drain.

In addition, NTZD3158PT1G comes with an integrated driver IC, meaning that there is no need for a separate driver to control the gate voltage. This reduces the cost and size of the circuit, as well as eliminates the need for an external switch or transistor, which further reduces the cost and complexity of the circuit.

Conclusion

NTZD3158PT1G is an excellent dual high voltage N-channel power MOSFET for medium current and high voltage applications. It has low on-resistance, low gate charge, high dV/dt stress immunity and the integrated driver IC makes it cost-efficient and compact. It is the perfect choice for application such as solar power module switching, battery management, flyback converters and AC/DC adapters.

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