Allicdata Part #: | NTZD3154NT1H-ND |
Manufacturer Part#: |
NTZD3154NT1H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.54A SOT563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 540mA 250mW Su... |
DataSheet: | NTZD3154NT1H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 540mA |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Power - Max: | 250mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563-6 |
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The NTZD3154NT1H is a MOSFET transistor array chip, that combines two N-channel, depletion-mode MOSFETs which are connected in a back-to-back configuration. The chip is produced in a SOT-223 package, with a maximum count of 16 pins. As a single chip, the NTZD3154NT1H is capable of switching up to 45 A, with a voltage rating of 30 V.
The application field for the NTZD3154NT1H is vast, as it carries out two roles: it can be used to provide a solid-state replacement for switches or relays and can be used as a high-side and low-side switch. As such, it can be used within any system requiring switching, including but not limited to, motor control, lighting control, and industrial process control.
The working principle of the NTZD3154NT1H revolves around three key elements: a metal-oxide-semiconductor field-effect transistor (MOSFET), a gate and a drain. The MOSFET is the heart of the device, providing the necessary switching capability. The gate is the control element, determining when and how much drain current passes through the chip. Finally, the drain is the output element, passing the current in the desired direction.
The NTZD3154NT1H utilizes depletion-mode MOSFETs as opposed to traditional enhancement-mode MOSFETs, which allows for a lower threshold voltage. This makes it suitable for low-voltage, low-power applications. Additionally, the chip has an internal diode, which helps prevent reverse Recovery Time from interfering with switching operations. Furthermore, the chip operates with low heat dissipation and high power efficiency.
The NTZD3154NT1H can thus be used in a variety of applications, due to its low noise, low-voltage and powerful switching performance. It is suitable when used in a back-to-back configuration and can be applied as either a high-side or low-side switch. No matter the application, its performance has been proven to be reliable and efficient.
The specific data is subject to PDF, and the above content is for reference
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