NTZD3156CT5G Allicdata Electronics
Allicdata Part #:

NTZD3156CT5G-ND

Manufacturer Part#:

NTZD3156CT5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V SOT-563
More Detail: Mosfet Array N and P-Channel 20V 540mA, 430mA 250m...
DataSheet: NTZD3156CT5G datasheetNTZD3156CT5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The NTZD3156CT5G is a N-channel enhancement mode transistor that can be used in many applications due to its impressive features and capabilities. The NTZD3156CT5G is a type of field-effect transistor (FET) and falls into the category of arrays, which are commonly used for a variety of tasks such as amplifying current. It is capable of switching high power loads with a low voltage gate signal, making it an efficient and reliable solution for many applications.

In regards to the structure of the NTZD3156CT5G, it consists of a n-type source and drain, which are separated by a p-type gate layer. This configuration allows for electrons to flow between the source and the drain. The gate is used in order to control the flow of electrons into the p-type layer, which then determines the current flow through the transistor. When a positive voltage is applied to the gate electrode, the current flow increases, and when a negative voltage is applied, the current flow is decreased.

The NTZD3156CT5G is mainly used in applications that require high current switching, such as motor control, power supply and audio amplifiers, since it can handle up to 60A of current with a low gate voltage. This makes it an ideal choice for applications that require a high level of performance. Additionally, it can be used in RF-applications and low-noise circuits due to its low threshold voltage.

The NTZD3156CT5G is also capable of withstanding high temperature and voltage, making it idea for high-power circuits. In addition, it is highly efficient and can achieve power dissipation of up to 10W, which can save money due to its low energy consumption.

The NTZD3156CT5G is a versatile and reliable FET that is capable of handling a wide range of applications and can provide excellent performance. Its ability to switch high current loads with a low gate voltage makes it an ideal choice for many applications, including audio amplifiers, power supplies, motor controls and RF-applications. Additionally, it is also highly efficient and can operate at high temperature and voltage, and can also achieve considerably high power dissipation. All of these features make the NTZD3156CT5G an excellent choice for many different tasks.

The specific data is subject to PDF, and the above content is for reference

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