NTZD5110NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTZD5110NT1GOSTR-ND |
Manufacturer Part#: |
NTZD5110NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 0.294A SOT563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 294mA 250mW Su... |
DataSheet: | NTZD5110NT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Base Part Number: | NTZD5110N |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 24.5pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 294mA |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTZD5110NT1G is an array of transistors and field effect transistors (FETs), which are used in digital applications. Its components consist of a cascode arrangement of two p-channel field effect transistors and one n-channel field effect transistor, with two p-channel field effect transistors connected to a common drain and a source terminal.
NTZD5110NT1G is widely used in digital circuits such as logic circuits and analog applications, as well as other electronic devices. Its main purpose is to enable a device to transfer digital signals between two points. It also serves to improve the performance of a device by improving its power efficiency, reliability, and accuracy.
Due to its wide application field, this device is highly efficient and reliable compared to other technologies. One of the most significant attributes of this device is its low-on-resistance, which allows the current to pass through the device smoothly. This low-on-resistance helps reduce the power consumption, making NTZD5110NT1G a preferred choice for efficient and reliable applications.
The working principle of NTZD5110NT1G is based on the field effect transistor (FET). A FET is a type of transistor that consists of two regions: the source and the drain. When a voltage is applied to the gate, it generates an electric field which in turn causes an electric current to flow from the source to the drain, making the device an efficient switch.
NTZD5110NT1G is made up of two transistors, the p-channel MOSFET and the n-channel MOSFET. The two MOSFETs are connected in parallel and are triggered by applying a voltage to the gate. The two devices act as a dual-gate MOSFET, providing two sets of gates for different functions. The n-channel MOSFET acts as a dual-gate to control the current passing through the device. The p-channel offers the same switching action but is slightly slower due to the higher gate capacitance.
The combined action of the two transistors allows the device to control and regulate the current passing through it without causing any disruption to the circuit. This makes the device highly efficient and reliable. Additionally, the dual-gate design allows for higher current switching, greater accuracy, and improved power efficiency.
Overall, NTZD5110NT1G is a highly efficient and reliable device that is widely used in digital and analog applications. Its efficient working principle, easy installation, and low power consumption make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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