NTZD5110NT1G Allicdata Electronics

NTZD5110NT1G Discrete Semiconductor Products

Allicdata Part #:

NTZD5110NT1GOSTR-ND

Manufacturer Part#:

NTZD5110NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 0.294A SOT563
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 294mA 250mW Su...
DataSheet: NTZD5110NT1G datasheetNTZD5110NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: NTZD5110N
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTZD5110NT1G is an array of transistors and field effect transistors (FETs), which are used in digital applications. Its components consist of a cascode arrangement of two p-channel field effect transistors and one n-channel field effect transistor, with two p-channel field effect transistors connected to a common drain and a source terminal.

NTZD5110NT1G is widely used in digital circuits such as logic circuits and analog applications, as well as other electronic devices. Its main purpose is to enable a device to transfer digital signals between two points. It also serves to improve the performance of a device by improving its power efficiency, reliability, and accuracy.

Due to its wide application field, this device is highly efficient and reliable compared to other technologies. One of the most significant attributes of this device is its low-on-resistance, which allows the current to pass through the device smoothly. This low-on-resistance helps reduce the power consumption, making NTZD5110NT1G a preferred choice for efficient and reliable applications.

The working principle of NTZD5110NT1G is based on the field effect transistor (FET). A FET is a type of transistor that consists of two regions: the source and the drain. When a voltage is applied to the gate, it generates an electric field which in turn causes an electric current to flow from the source to the drain, making the device an efficient switch.

NTZD5110NT1G is made up of two transistors, the p-channel MOSFET and the n-channel MOSFET. The two MOSFETs are connected in parallel and are triggered by applying a voltage to the gate. The two devices act as a dual-gate MOSFET, providing two sets of gates for different functions. The n-channel MOSFET acts as a dual-gate to control the current passing through the device. The p-channel offers the same switching action but is slightly slower due to the higher gate capacitance.

The combined action of the two transistors allows the device to control and regulate the current passing through it without causing any disruption to the circuit. This makes the device highly efficient and reliable. Additionally, the dual-gate design allows for higher current switching, greater accuracy, and improved power efficiency.

Overall, NTZD5110NT1G is a highly efficient and reliable device that is widely used in digital and analog applications. Its efficient working principle, easy installation, and low power consumption make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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