NTZD3156CT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTZD3156CT1G is a dual N-Channel Enhancement-Mode Field Effect Transistor (FET) array that has been specially designed for use in general purpose applications. It features P-channel and N-channel MOSFETs that are connected to two sources and three gates. This transistor array is capable of providing high performance and low power consumption, making it an ideal choice for a wide range of applications.

The NTZD3156CT1G has two P-channel MOSFETs with a low-side source voltage rating of -2.7V to -90V, and a high-side source voltage rating of 6V to -50V. It has two N-channel MOSFETs with a low-side source voltage rating of -3.3V to -30V and a high-side source voltage rating of 6V to -20V. The threshold voltage of the device is -2.5V.

The operation of the NTZD3156CT1G is similar to a transistor amplifier. The input signal is applied to the gate of each MOSFET and a voltage or current is then applied to the drain of the MOSFET. This voltage or current is then amplified and passed through to the output. This type of amplifier is often used in applications where a high voltage or current is required, such as in power supplies, audio amplifiers, and voltage regulators.

The NTZD3156CT1G is well-suited to a variety of applications due to its low voltage, low current, and low capacitance specifications. It can be used to amplify low level audio signals, to reduce power consumption in high-current circuits, and to provide high-voltage protection for sensitive electronics. It can also be used in LED driver circuits, battery packs, and vibration analysis systems. Furthermore, the device is especially suitable for use in automotive applications such as immobilizers and electronic keys.

The NTZD3156CT1G features three gates for controlling the current flow through the MOSFETs, which allows for the customization of the operating parameters. The gate can be used to adjust the characteristics of the MOSFETs, such as the turn-on and turn-off threshold voltages. This feature allows the device to be used in a wide variety of applications, making it an ideal choice for engineers and designers.

The NTZD3156CT1G can provide significant levels of performance, reliability, and power savings over traditional transistor arrays. Its low voltage and current ratings, as well as its unique gate configuration make it ideal for applications where size and power efficiency are paramount concerns. The device is easy to integrate into existing systems and provides an excellent choice for engineers and designers looking for a reliable and cost-effective transistor array.

The specific data is subject to PDF, and the above content is for reference