NTZD3155CT2G

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	NTZD3155C
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	250mW
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:	2.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	550 mOhm @ 540mA, 4.5V
Current - Continuous Drain (Id) @ 25°C:	540mA, 430mA
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	N and P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The NTZD3155CT2G is a specially designed integrated power transistor array. It combines the high performance of the NFET (Nitride Field Effect Transistor) with the low on-resistance of the P-channel FET (Field Effect Transistor). In order to increase its efficiency, it uses a process of deep source diffusion. This helps to improve the power handling capability. Furthermore, the device has low gate charge and low on-state resistance. The NTZD3155CT2G is mainly used in power supply and motor control circuits. It is especially suitable for switch mode power supplies (SMPS), high-side driving, low-side driving and motor control applications. Furthermore, this product is highly reliable and features low gate charge and low gate resistance, making it an ideal choice for high power applications. It is also used for high performance applications requiring a low gate charge, high switching capability and low on state resistance. The NTZD3155CT2G is constructed with multiple transistors on each substrate, related as source, drain and gate. The device is also capable of providing both P-channel and N-channel performance. First, the source and gate are connected in series and are connected to the positive and negative supply rails respectively. Secondly, the gate is connected to the drain via an insulated gate. The gate voltage determines the on/off state of the device. The threshold voltage is adjustable by applying a positive and negative voltage to the gate terminal.The design of the NTZD3155CT2G allows it to work as both a switching device and an amplifier. Its low on resistance and low gate charge make it suitable for high power applications. Furthermore, its reverse and inductor dual dielectric isolation helps to prevent any leakage and to improve the performance of the power circuits.The working principle of the NTZD3155CT2G is quite simple. When it is on, the gate is provided with a high voltage and this in turn allows the current to flow from the drain to the source, via the insulated gate. The amount of current that can flow through the device is determined by the voltage applied to the gate. The device is in the off state when the gate is at a low voltage. This in turn prevents the current from flowing through the device and allows the device to remain off.The device can be driven either by a P-channel FET, or by an N-channel NFET. When the P-channel FET is used the drain voltage is positive and the gate voltage is negative. In N-channel NTZD3155CT2G devices the gate voltage is positive and the drain voltage is negative. The device can be turned off by setting the gate voltage to zero.In addition to the power supply and motor control applications, the NTZD3155CT2G is also useful in other applications such as switching between battery packs for electric vehicles and for on/off switch for solar charge controllers. It is also used for driving lamps and for driving audio amplifiers.In conclusion, the NTZD3155CT2G is a versatile and powerful device used in many different types of applications. Its features of low on-resistance and gate charge make it an ideal choice for high power applications. Its design and working principle also make it suitable for a wide range of applications ranging from power supply and motor control to audio amplifiers. Furthermore, its reverse and inductor dual dielectric isolation feature makes it highly reliable and ensures a high level of performance in various applications.

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