NTZD3154NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTZD3154NT1GOSTR-ND |
Manufacturer Part#: |
NTZD3154NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.54A SOT-563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 540mA 250mW Su... |
DataSheet: | NTZD3154NT1G Datasheet/PDF |
Quantity: | 24000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | NTZD3154N |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 540mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 540mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTZD3154NT1G is a quad FET array that is part of the production lines of Toshiba Semiconductors. It is used in equipment of all sorts, such as home electronics, industrial electronics applications, and various types of communications equipment.
The NTZD3154NT1G has a drive current range of 4 to 50 mA, maximum drain to source gain of 5 V/V, and gate to source threshold voltage of 0.3 V. It produces a drain current that ranges between 2 A and 20 A and can be operated at frequencies ranging from 10 kHz to 2.4 GHz. This allows it to be used for a wide range of applications and even in the most demanding conditions.
The NTZD3154NT1G is designed to provide protection from electrical overstress. It is designed with an electrostatic discharge protection rating of >5 kV, providing a high degree of protection for devices in the most extreme conditions. The NTZD3154NT1G also has a low output channel on resistance rating of 40 ohm, allowing a low power draw from the device.
The NTZD3154NT1G is designed to be used in both low and high speed applications with an operating temperature range of -55 to +150 degrees Celsius. It is also designed with a reverse body diode protection, providing further protection in extreme conditions. The device can also be used in a wide range of signal conditioning and signal processing applications due to its high transconductance.
The NTZD3154NT1G works through the use of four separate Field Effect Transistors (FETs). The FETs are arranged in a symmetrical layout and are connected as source to source, source to drain, and drain to drain. As a consequence, their electrical characteristics are balanced and consistent. This means that the NTZD3154NT1G is able to provide a controlled and precise output, ensuring the highest level of performance.
The NTZD3154NT1G is a part of the production lines of Toshiba Semiconductors and can be used in many different applications. It is a reliable and durable device designed to meet all kinds of domestic, industrial, and commercial needs. The NTZD3154NT1G is a versatile quad FET array that is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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