Allicdata Part #: | NTZD3155CT5G-ND |
Manufacturer Part#: |
NTZD3155CT5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V SOT-563 |
More Detail: | Mosfet Array N and P-Channel 20V 540mA, 430mA 250m... |
DataSheet: | NTZD3155CT5G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | NTZD3155C |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 540mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 540mA, 430mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTZD3155CT5G is an insulated gate field-effect transistor (IGFET) driving array most commonly used in both high- and low-voltage applications. The NTZD3155CT5G is the first such array of its type, with eight N-Channel MOSFETs built into an array format. The array provides an on/off signal while providing voltage, current, and power switching functionality.
The NTZD3155CT5G is most commonly used in automotive adapters, power supplies, and power converters. It can also be used in medical and industrial equipment, lighting, and audio applications. The NTZD3155CT5G is also suitable for the protection and isolation circuits of MOSFETs and other high-voltage devices.
The NTZD3155CT5G uses a 50W Power MOSFET gate array to provide both high- and low-voltage gate driving. It operates from a supply voltage range of 4.5V to 15V, delivering up to 1.5A peak current per output. The array also has integrated gate protection to protect from negative transients and high-energy transients that can damage the devices. The array also features cross-coupled current limiting, thermal protection, short-circuit protection, and overload protection.
The working principle of the NTZD3155CT5G is based on the MOSFET principle of using an electric field to control the flow of electrons through a channel between two terminals. The electric field is generated by changing the voltage applied to the gate of the transistor. When the gate voltage is higher than the source voltage, the transistor is switched on and current is allowed to flow through the channel; when the gate voltage is lower, the transistor is switched off and current is prevented from flowing.
When using the NTZD3155CT5G array, the current is limited to the maximum current rating of the array by the array\'s circuitry. This ensures that the devices will not be damaged or over-stressed by excessive current when used in applications that require high current. The thermal protection feature also ensures that the devices will not be damaged by over-heating.
In summary, the NTZD3155CT5G is a versatile and powerful MOSFET gate driving array which is used in a variety of applications. It offers high current output, integrated gate protection, cross-coupled current limiting, thermal protection, overload protection, and short-circuit protection, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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