PBSS4021PT,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3.5A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	330mV @ 400mA, 4A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 2A, 2V
Power - Max:	1.1W
Frequency - Transition:	155MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PBSS4021P

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<h2>Transistors - Bipolar (BJT) - Single</h2>PBSS4021PT,215 is a PNP epitaxial silicon planar transistor manufactured by NXP Semiconductors. This transistor belongs to the Transistors - Bipolar (BJT) - Single family, and is designed for use in low; frequency amplifier applications. This device has a relatively low voltage. The maximum working voltage is 6 V and the maximum collector current is 500 mA. It also has a low output capacitance and low noise figure.The transistor has two main electrodes, the emitter and the collector, and a control electrode called the base. It is the movement of electrons and holes between the emitter and the collector that is responsible for the amplification effect of the transistor. When an input current is applied to the base of the transistor, this current controls the flow of electrons and holes between the emitter and the collector.The PBSS4021PT,215 has a wide range of applications, such as audio amplifiers, oscillators, logic circuits, etc. It is also used in radio transmitters and receivers, oscilloscopes and other electronic equipment. It can also be used as a switch and to amplify low-frequency signals.The working principle of a transistor is based on the fact that when a small current is passed through a semiconductor material, it creates a larger current and voltage gain. This is because the small current passed through the semiconductor material creates a potential barrier between the collector and emitter. This potential barrier is called a base-emitter junction, and it is responsible for the current and voltage gain. When current is passed through the base-emitter junction, electrons are allowed to flow from the emitter to the collector, creating a larger current and voltage gain.The PBSS4021PT,215 is an NPN type PNP silicon planar transistor. It is a convenient transistor to use because of its low voltage, low noise figure and low output capacitance. It has a wide range of applications, and is particularly useful in audio amplifiers, oscillators, logic circuits and radio transmitters and receivers. It is also a very popular choice for low-frequency signal amplifiers.

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