Allicdata Part #: | 1727-3940-2-ND |
Manufacturer Part#: |
PBSS8110T,215 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 100V 1A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 480mW ... |
DataSheet: | PBSS8110T,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09228 |
6000 +: | $ 0.08633 |
15000 +: | $ 0.08038 |
30000 +: | $ 0.07938 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 250mA, 10V |
Power - Max: | 480mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PBSS8110 |
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The PBSS8110T,215 is a type of transistor - bipolar (BJT) - single. It is an N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) with an 8V drain-source breakdown voltage and a 0.18Ω maximum on-resistance at a 10V gate-source voltage. As such, it provides a low-voltage and low-power switch for applications where a high voltage or current capacity is not required.
The PBSS8110T,215 is suitable for a variety of applications. These include, but are not limited to, switching regulators, AC and DC motor drives, DC/DC converters, and inverter circuits. The device can also be used as a load switch in logic circuits, a control element in digital-analog converters, or as an electronic multiplexer/demultiplexer.
The working principle of the PBSS8110T,215 involves a gate-source voltage (VGS) that controls the amount of current that can flow through the device. When a high voltage is applied to the gate, an electric field is created between the drain and source terminals which attracts the electrons from the source to the drain. This reduces the resistance between the two, thus allowing more current to flow through the device. When the voltage is reduced, the electric field is diminished, which results in an increase in resistance, thus decreasing the amount of current that can flow.
The PBSS8110T,215 can also be used in parallel when the application requires more than one transistor. Such applications include rectifiers and DC-DC converters where higher power levels are needed. By connecting several of these transistors in parallel, the overall current and power handling capabilities can be multiplied, allowing for higher output power levels.
The PBSS8110T,215 is a high-performance transistor designed for low-voltage and low-power applications. With its low off-state leakage and low on-state resistance, it is well suited for a wide variety of applications where small current or low-voltage switch capabilities are required. It can be used in a variety of applications, from switching regulators and AC/DC motor drivers to inverters and load switches.
The specific data is subject to PDF, and the above content is for reference
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