Allicdata Part #: | 1727-5336-2-ND |
Manufacturer Part#: |
PBSS5520X,135 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 20V 5A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 5A 100MHz 1.6W Su... |
DataSheet: | PBSS5520X,135 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.09413 |
8000 +: | $ 0.08806 |
12000 +: | $ 0.08198 |
28000 +: | $ 0.08097 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 270mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 2A, 2V |
Power - Max: | 1.6W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | PBSS5520 |
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:PBSS5520X,135 application field and working principle
The PBBS5520X,135 transistor is a type of bipolar (BJT) single transistor device. It is commonly used as a power switch or as a linear amplifier. It is a NPN (negative-positive-negative) type transistor typically found in integrated circuits (ICs). It has a 3-pin configuration with a collector (C), base (B), and an emitter (E) terminal.
The PBBS5520X,135 transistor is typically used as a power switch in a variety of electronic devices. This includes power supplies for computers, TVs, video game consoles, and other consumer electronics. As a power switch, it is used to control electricity flow in various circuits. It provides excellent enucleation, high input impedance and low collector-to-emitter capacitance. This makes it ideal for applications such as relays, DC motors, servo motors, and switching applications.
The PBBS5520X,135 transistor can also be used as a linear amplifier. It is a linear amplifier because the output current is proportional to the input current within a specific range. This is done by altering the voltage across the collector and emitter connections. It can be used in stereo systems, boot amplifiers, and low-power radios, among other applications.
The working principle of the PBBS5520X,135 transistor is based on the concept of a three-terminal semiconductor device. It works just like a switch, depending on the amount of current that passes through its base. When the current is low, the transistor’s contact is open and there is no current flowing. With increased current, the transistor’s contact closes and current flow is enabled.
The emitter is connected to the base and the collector is connected to the base. As the current increases, the transistor’s contact gets smaller and there is less resistance between the emitter and base. This low resistance between the emitter and base allows greater current to flow between them, thus allowing control of the voltage between the collector and emitter.
Another important concept related to the PBBS5520X,135 is the base-emitter bias voltage. This is the voltage between the base and emitter when current is flowing through the transistor. This voltage determines how much current flows from the collector to the emitter.
The base-emitter bias voltage is set by the current flowing from the base to the emitter. When the current from the base is low, the voltage is low, and vice versa. This ratio is referred to as the gain of a transistor. The higher the current from the base to the emitter, the greater the gain (amplification) of the transistor.
In summary, the PBBS5520X,135 is a type of bipolar (BJT) single transistor commonly used as a power switch or as a linear amplifier. It is a three-terminal semiconductor device that works by allowing or restricting the flow of current through its base. It has excellent enucleation and can be used in a variety of applications, from relays and DC motors to low-power radios and stereo systems. The way the PBBS5520X,135 works is determined by the current that flows from the base to the emitter and the base-emitter bias voltage.
The specific data is subject to PDF, and the above content is for reference
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