| Allicdata Part #: | 1727-4337-2-ND |
| Manufacturer Part#: |
PBSS4032PD,115 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS PNP 30V 2.7A 6TSOP |
| More Detail: | Bipolar (BJT) Transistor PNP 30V 2.7A 104MHz 1W Su... |
| DataSheet: | PBSS4032PD,115 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.11279 |
| 6000 +: | $ 0.10551 |
| 15000 +: | $ 0.09824 |
| 30000 +: | $ 0.09702 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2.7A |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 395mV @ 300mA, 3A |
| Current - Collector Cutoff (Max): | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 104MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | 6-TSOP |
| Base Part Number: | PBSS4032P |
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The PBSS4032PD, 115 is a transistor in the single bipolar junction field. It consists of a collector, emitter, and base to form a 3-layer semiconductor. The transistor is most commonly used as a switch or amplifier, and is found in many electronic applications. This guide will provide a closer look at the application field and working principle of the PBSS4032PD, 115.
The PBSS4032PD, 115 is a NPN bipolar transistor. It has a maximum collector-emitter voltage of 40 V and a maximum collector current of 500 mA, making it ideal for applications that require moderate power output. The transistor has a low voltage drop, making it suitable for applications that demand low losses in the circuit. It also has a high gain, ensuring reliable signal amplification. As a result, the PBSS4032PD, 115 is commonly used in radio transmission, security systems, relays, and other electronic applications.
The PBSS4032PD, 115 works by allowing current to flow between the collector and emitter when a voltage is supplied to the base. This phenomenon is known as current amplification, and it forms the basic working principle of the transistor. The transistor amplifies a small current at the base to produce a larger current at its collector. The amount of amplification is determined by the gain of the transistor, which is essentially a measure of its ability to increase the current.
The circuit diagram of the PBSS4032PD, 115 is quite simple. It includes a collector connected to the base, and an emitter connected to the collector. The diagram also shows the connections to the power supply and the output load. For example, the collector can be connected to the positive supply, while the emitter can be connected to the output load. When the voltage at the base is higher than the voltage at the emitter, current flows from the collector to the emitter, producing a larger current at the output load.
The PBSS4032PD, 115 is a versatile NPN bipolar transistor that can be used for a variety of applications. Its low voltage drop and high gain make it ideal for radio transmission, security systems, relays, and other electronics projects. It is a reliable transistor that offers great performance in its power range. Furthermore, its simple working principle and easy circuit diagram make it an excellent choice for both experienced and novice engineers.
The specific data is subject to PDF, and the above content is for reference
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PBSS4032PD,115 Datasheet/PDF