
Allicdata Part #: | 1727-1077-2-ND |
Manufacturer Part#: |
PBSS5112PAP,115 |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP 120V 1A 6HUSON |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.10527 |
6000 +: | $ 0.09848 |
15000 +: | $ 0.09168 |
30000 +: | $ 0.08693 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 480mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 2V |
Power - Max: | 510mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
Base Part Number: | PBSS5112 |
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The PBSS5112PAP, 115 are a type of transistors known as bipolar junction transistors (BJT\'s). These transistors are designed for applications in which current or voltage needs to be boosted or switched. The transistors can be used with a wide range of voltages, from as low as 3 volts to as high as 600 volts.
The PBSS5112PAP, 115 consists of two n-type and one p-type material. The junction between the n-type and p-type material are known as the emitter-base and collector-base junctions. When a voltage is applied to the emitter-base junction, it causes the electrons to flow from the emitter to the collector material. This process is known as the transistor effect. When the current flows through the transistor, it is called the collector current.
The PBSS5112PAP, 115 are most commonly used in applications such as switching and amplification. They can be used as an amplifier in high frequency applications, such as radio receivers and amplifiers. They can also be used in audio amplifiers, as well as some data converters and digital circuits. They can also be used for controlling the current and voltage in power supplies.
The working principle of a PBSS5112PAP, 115 is relatively simple. When a current is applied to the emitter terminal, that current will flow through the junction between the emitter and the collector. The recombination of the electrons with the collector material will create a voltage across the collector-base. This voltage is then used to control the current flowing through the device.
The PBSS5112PAP, 115 are an efficient and reliable transistor array, and can be used in a wide range of applications. They are used in the automotive industry, aerospace, telecommunications, and military applications. They are also ideal for smart device applications, as they are small, light, and power efficient.
The PBSS5112PAP, 115 are a reliable and efficient solution for applications that need current or voltage boosting or switching. They are widely used in the automotive, aerospace, military and telecommunications industries, as well as in smart device applications. The working principle is relatively simple, and the transistors are designed for use with a wide range of voltages and currents.
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

IC INTEGRATED CIRCUITBipolar (BJT) Trans...
