PBSS4230PAN,115 Allicdata Electronics
Allicdata Part #:

1727-1073-2-ND

Manufacturer Part#:

PBSS4230PAN,115

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 30V 2A 6HUSON
More Detail: Bipolar (BJT) Transistor Array 30V 2A 120MHz 510m...
DataSheet: PBSS4230PAN,115 datasheetPBSS4230PAN,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11794
6000 +: $ 0.11033
15000 +: $ 0.10272
30000 +: $ 0.09740
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: --
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 510mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6
Description

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PBSS4230PAN,115 – Transistors – Bipolar (BJT) – Arrays

The PBSS4230PAN,115 is an NPN Silicon Epitaxial Planar Array transistor housed in a five-pin plastic package. The transistors included in the array are designed to be used in common emitter configuration, making them suitable for amplification, switching and other related applications. The device is also designed to be used in high temperature and harsh environments.

The PBSS4230PAN,115 has a maximum collector current of 15 A and a maximum power dissipation of 2.2 Watts. The transistor features a collector-emitter voltage rating of 325 V and an emitter-collector voltage rating of 25 V. The transistor can also support a high current gain with a minimum of 70 at an input voltage of 0.2 V.

The PBSS4230PAN,115 is also designed for use in applications that require high speed switching, such as power converters, power motor drives and other high-frequency applications. Due to its ability to handle high currents and high voltages, it is often used in surge suppressors and other protection circuits. The device is designed to be radiation resistant and has a robust construction.

The working principle of the PBSS4230PAN,115 is based on a simple concept. When a forward bias voltage is applied across the transistor base-emitter junction, then electrons are injected into the base and a current flow is created. This current flow is then amplified and transferred to the collector terminal. As a result, the current passing through the collector-emitter junction increases and the current passing through the base-emitter junction decreases. This effect is used for amplification and switching.

In addition to the amplification and switching functions, the device also has other applications in the field of programmable logic controllers (PLCs). PLCs are used in industrial and other commercial settings to control electrical circuits and other complicated processes. As such, the device can be used to control the current flow and voltage levels to maintain precise control over the processes being monitored. Furthermore, the PBSS4230PAN,115 is also used in the design of power electronics, as it is able to provide stable and high-fidelity voltage and current control for these applications.

The PBSS4230PAN,115 has many advantages, such as its high current capacity, high voltage rating, robust construction and radiation resistance. Furthermore, the associated cost is also quite low when compared to other transistors and arrays. The device is an ideal solution for those looking for a reliable and efficient solution for their power amplification, switching and programming requirements.

The specific data is subject to PDF, and the above content is for reference

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