PBSS4320TVL Allicdata Electronics
Allicdata Part #:

PBSS4320TVL-ND

Manufacturer Part#:

PBSS4320TVL

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PBSS4320T/SOT23/TO-236AB
More Detail: Bipolar (BJT) Transistor NPN 20V 2A 100MHz Surfac...
DataSheet: PBSS4320TVL datasheetPBSS4320TVL Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04445
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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The PBSS4320TVL, classified as a single bipolar junction transistor (BJT), is a transistor specifically designed for medium-power, low saturation voltage and high gain switching applications. It typically has a maximum collector current of 1.5 amperes and can easily handle an average current of up to 1.0 amperes with minimal temperature rise due to its thermal management design. Additionally, with its low profile, this transistor can achieve high switching speeds with a guaranteed avalanche breakdown voltage rating of 100 volts.

The PBSS4320TVL has a PNP-style structure, and its breakdown voltage at collector junction is somewhat lower than that of a typical NPN-style BJT, making it identical to NPN’s in terms of its average current rating. The collector-base breakdown voltage of this device is derived from the semiconductor’s very low leakage currents, thus allowing a less vulnerable device to be produced in a much less complex package without compromising its high current handling or switching abilities.

The PBSS4320TVL provides higher gain than many traditional BJT transistors due to its built-in design. Its NPN structure is slightly modified to increase inter-electrode capacitances, allowing the base to easily collect electrons from the collector and discharge them from the base. Due to this higher gain factor, it can create more power and draw more current for a given voltage compared to other TDBCs.

The PBSS4320TVL not only provides excellent switching performance for low power applications, but also has very low power consumption. Due to its small package, it requires minimal power to operate, meaning that it can be utilized in small devices with limited power supplies. Additionally, its ESD protection and very low saturation voltage make it suitable for high-speed switching and digital logic applications.

The working principle of the PBSS4320TVL is quite simple: when a base electrode of the device is charged, a small electric current passes through the device, thereby releasing electrons from the collector and into the base. These electrons then form a current, known as collector current. Similarly, when the base is discharged, the collector current is discharged and the device enters a non-conductive state.

The principal application or use of the PBSS4320TVL is in consumer electronics such as televisions, DVD players, set-top boxes, and audio systems. It is also used in motor control applications. In addition, it is a great choice for high-density signal switching as it has very low power consumption and can easily support larger signal frequencies. Furthermore, its versatile capability of targeting multiple frequencies at high speed enables it to control numerous circulation paths.

Therefore, the PBSS4320TVL is an extremely useful device that can be utilized in a variety of applications. It offers excellent switching performance for low power applications, has very low power consumption, and provides higher gain compared to many traditional BJT transistors. Additionally, it is designed with built-in ESD protection and has a very low saturation voltage, making it suitable for high-speed switching and digital logic applications.

The specific data is subject to PDF, and the above content is for reference

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