Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	390mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	155 @ 1A, 2V
Power - Max:	900mW
Frequency - Transition:	185MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-666
Base Part Number:	PBSS5220

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Transistors - Bipolar (BJT) - Single

PBSS5220V,115 Application Field and Working Principle

The PBSS5220V,115 is a monolithic, single-transistor bipolar junction transistor. It is commonly referred to as a BJT or a bipolar transistor. The device consists of a P-type base, an N-type emitter, and an N-type collector, contained within a single package. This combination of P and N-type semiconductor regions creates a PN junction, which is the fundamental building block of transistors. This junction allows current to flow through the device in one direction.The PBSS5220V,115 is designed for low-noise and super-low-noise applications. It is used in circuits such as amplifiers and oscillators and is commonly employed in audio and voice communication. The device has a moderate voltage rating and an excellent current capability. This makes it suitable for applications where low power dissipation is required.The primary function of transistors is to control the flow of current in circuits. The PBSS5220V,115 allows current to flow through it by creating a small barrier to the flow of electrons. When the base voltage increases, the current flow increases in the forward bias direction. This is due to the decrease in resistance in the transistor junction. Conversely, when the base voltage decreases, the current flow decreases in the reverse bias direction. This is due to the increase in resistance in the transistor junction.The PBSS5220V,115\'s current gain, also known as beta, can range from 90 to 160. This means that for every one unit of base current, the transistor can amplify the output current to 90-160 units. This high current gain makes the device ideal for applications requiring low noise levels.The PBSS5220V,115 is also suitable for amplifier stages requiring dc bias control. This is because the device has a low-voltage drop, which allows the stage to operate in a wide range of DC conditions. Furthermore, the device has a low-power loss, which helps to reduce the power dissipation in the circuit.In summary, the PBSS5220V,115 is a low-noise, high current gain, single-transistor bipolar junction transistor. It is suitable for applications requiring low power dissipation, dc bias control, and low noise levels. The device is typically used in amplifiers and oscillators, as well as audio and voice communication systems.

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