Allicdata Part #: | 1727-1199-2-ND |
Manufacturer Part#: |
PBSS5330X,135 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 30V 3A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 3A 100MHz 1.6W Su... |
DataSheet: | PBSS5330X,135 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.06658 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 175 @ 1A, 2V |
Power - Max: | 1.6W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | PBSS5330 |
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The PBSS5330X,135 is a part of the family of single bipolar transistors (BJT) offered by NXP Semiconductors. The device is a high-efficiency, high-voltage, surface-mount NPN power transistor that is designed for use in power linear and SWITCHMODE applications. It offers a maximum operating voltage of 450V, a low forward voltage drop, and a current rating of 18A. Its wide common-emitter current gain bandwidth (fT) provides for high frequency switching performance.
The PBSS5330X, 135 is constructed with a planar vertical NPN epitaxial process, which minimizes the parasitic diode and provides low leakage. This transistor is rated at 1W DC Collector dissipation at room temperature and has a maximum operating temperature at 175°C. It is an excellent choice for use in low frequency power linear audio, switchmode, and powerbridge applications.
The PBSS5330X,135 has excellent current gain over a wide band of operating conditions. The transistor features a guaranteed gain bandwidth of 15MHz and low current gain switching performance of fT = 1MHz. This property makes the transistor well-suited for use in communications applications. The device also features a low base-emitter voltage (VCEsat) of 1.5V, which allows for efficient operation even at low collector currents. The transistor has a minimum breakdown voltage (BV) of 580V which makes it ideal for use in high voltage or high frequency switching applications.
The PBSS5330X,135 can be used as a power amplifier, preamplifier, SWITCHMODE regulator, high voltage regulator, motor driver, and other similar applications that require high power and low noise. The device is packed in industry standard SO-6 packages and is compatible with through-hole, surface-mount, and dual-in-line assembly systems. It is also backwards compatible with some older NPN power transistors.
The PBSS5330X,135 is a NPN power transistor that is well-suited for high-efficiency power linear and SWITCHMODE applications. Its high voltage rating, excellent current gain, and low forward voltage drop ensure high performance operation even in the most demanding of applications. The package is designed for compatibility with a variety of assembly systems, making it an ideal choice for a wide range of applications.
The PBSS5330X,135 offers a wide common-emitter current gain bandwidth and a low base-emitter voltage, making it an excellent choice for applications such as power amplifiers, preamplifiers, SWITCHMODE regulators, motor drivers, and other similar applications that require high power and low noise. Its excellent properties make it well-suited for low frequency power linear audio, switchmode, and powerbridge applications.
The specific data is subject to PDF, and the above content is for reference
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