| Allicdata Part #: | PD55003STR-E-ND |
| Manufacturer Part#: |
PD55003STR-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | FET RF 40V 500MHZ PWRSO-10 |
| More Detail: | RF Mosfet LDMOS 12.5V 50mA 500MHz 17dB 3W PowerSO-... |
| DataSheet: |  PD55003STR-E Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 500MHz |
| Gain: | 17dB |
| Voltage - Test: | 12.5V |
| Current Rating: | 2.5A |
| Noise Figure: | -- |
| Current - Test: | 50mA |
| Power - Output: | 3W |
| Voltage - Rated: | 40V |
| Package / Case: | PowerSO-10 Exposed Bottom Pad |
| Supplier Device Package: | PowerSO-10RF (Straight Lead) |
| Base Part Number: | PD55003 |
Description
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The PD55003STR-E is an RF power MOSFET transistor manufactured by Power Dynamics. It is a highly integrated radio frequency (RF) power transistor that can provide high efficiency power amplifiers (PA) for communication applications, including wireless infrastructure and when used in conjunction with other PD55003/PD5504/PD5504-1 devices can also form two-stage and three-stage amplifier configurations. The PD55003STR-E is designed for L (≤1.8GHz) and S-band (2.0–2.6GHz) applications, supporting the industry’s leading standards including GSM, EDGE, WCDMA, HSDPA and LTE.
The PD55003STR-E has a depletion mode MOSFET topology and is Vertical Double-Diffused Metal Oxide Semiconductor (DMOS) device. In terms of its construction, it consists of a multi-gate structure, adding a third silicon gate over an array of interdigitated polysilicon gates. This vertical multi-gate technology ensures extremely low gate resistance, reducing power losses and improving gain and efficiency. Also because of the DMOS technology, the PD55003STR-E provides robust breakdown voltage capability, further improving its performance in power amplifiers.
The PD55003STR-E is a high-performance RF power MOSFET transistor and is most commonly used for GSM800 and WCDMA cellular base-station applications. In particular, it allows multi-carrier operation which can be used to achieve higher data rates and support new advancements in communication technology, such as multicarrier transmission. Furthermore, it also offers very low distortion levels and a high output power level (35dBm @3V).
The PD55003STR-E has a power rating of 35Watts, with a drain-source voltage rating of 30V, providing an option for safe operation at multiple supply voltages and, therefore, reduced size and cost of the application. It also features a wide operational temperature range (-55°C to +85°C), enabling reliability for harsh environments. Additionally, the PD55003STR-E incorporates built-in resistance to RF and to line variations, providing excellent linear gain and efficiency over a wide frequency range.
In addition to its excellent electrical characteristics, the PD55003STR-E also offers highly efficient thermal management. This is achieved through its ceramic package, eliminating most of the heat generated by the device. Furthermore, due to its size (7.0 × 6.0 × 0.96mm), it can be placed in small spaces with ease, allowing designers to create small high-performance layouts.
The PD55003STR-E uses a Metal Organic Chemical Vapor Deposition (MOCVD) process to increase the operating temperature of the transistor, enhancing its performance and durability. To further improve its performance, the device features multiple turrets within its silicon substrate which helps optimize the internal resistance and increase its current capability.
To summarize, the PD55003STR-E is a highly integrated RF power MOSFET transistor manufactured by Power Dynamics. It is designed to provide high efficiency performance in GSM, EDGE, WCDMA, HSDPA and LTE applications, with a power rating of 35W and a wide operating temperature (-55°C to +85°C). Its DMOS technology ensures robust breakdown voltage, reduced power losses and excellent linear gain and efficiency. Furthermore, it also offers low distortion levels and a high output power level, along with several other features to enhance its performance.
The PD55003STR-E has a depletion mode MOSFET topology and is Vertical Double-Diffused Metal Oxide Semiconductor (DMOS) device. In terms of its construction, it consists of a multi-gate structure, adding a third silicon gate over an array of interdigitated polysilicon gates. This vertical multi-gate technology ensures extremely low gate resistance, reducing power losses and improving gain and efficiency. Also because of the DMOS technology, the PD55003STR-E provides robust breakdown voltage capability, further improving its performance in power amplifiers.
The PD55003STR-E is a high-performance RF power MOSFET transistor and is most commonly used for GSM800 and WCDMA cellular base-station applications. In particular, it allows multi-carrier operation which can be used to achieve higher data rates and support new advancements in communication technology, such as multicarrier transmission. Furthermore, it also offers very low distortion levels and a high output power level (35dBm @3V).
The PD55003STR-E has a power rating of 35Watts, with a drain-source voltage rating of 30V, providing an option for safe operation at multiple supply voltages and, therefore, reduced size and cost of the application. It also features a wide operational temperature range (-55°C to +85°C), enabling reliability for harsh environments. Additionally, the PD55003STR-E incorporates built-in resistance to RF and to line variations, providing excellent linear gain and efficiency over a wide frequency range.
In addition to its excellent electrical characteristics, the PD55003STR-E also offers highly efficient thermal management. This is achieved through its ceramic package, eliminating most of the heat generated by the device. Furthermore, due to its size (7.0 × 6.0 × 0.96mm), it can be placed in small spaces with ease, allowing designers to create small high-performance layouts.
The PD55003STR-E uses a Metal Organic Chemical Vapor Deposition (MOCVD) process to increase the operating temperature of the transistor, enhancing its performance and durability. To further improve its performance, the device features multiple turrets within its silicon substrate which helps optimize the internal resistance and increase its current capability.
To summarize, the PD55003STR-E is a highly integrated RF power MOSFET transistor manufactured by Power Dynamics. It is designed to provide high efficiency performance in GSM, EDGE, WCDMA, HSDPA and LTE applications, with a power rating of 35W and a wide operating temperature (-55°C to +85°C). Its DMOS technology ensures robust breakdown voltage, reduced power losses and excellent linear gain and efficiency. Furthermore, it also offers low distortion levels and a high output power level, along with several other features to enhance its performance.
The specific data is subject to PDF, and the above content is for reference
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