PD55015S-E Allicdata Electronics
Allicdata Part #:

497-6716-5-ND

Manufacturer Part#:

PD55015S-E

Price: $ 10.63
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 40V 500MHZ PWRSO-10
More Detail: RF Mosfet LDMOS 12.5V 150mA 500MHz 14dB 15W PowerS...
DataSheet: PD55015S-E datasheetPD55015S-E Datasheet/PDF
Quantity: 1000
400 +: $ 9.66483
Stock 1000Can Ship Immediately
$ 10.63
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 500MHz
Gain: 14dB
Voltage - Test: 12.5V
Current Rating: 5A
Noise Figure: --
Current - Test: 150mA
Power - Output: 15W
Voltage - Rated: 40V
Package / Case: PowerSO-10 Exposed Bottom Pad
Supplier Device Package: PowerSO-10RF (Straight Lead)
Base Part Number: PD55015
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PD55015S-E is a high-power N-channel enhancement mode MOSFET that belongs to the high power series of products from the PD55000 family. It is used in many radio frequency (RF) applications and is well known for its superior performance in high-frequency power amplification, linear amplifiers, phase array antennas and high-efficiency switching applications.

The PD55015S-E is a high voltage device, with a drain to source voltage of 250 volts and a drain current rating of 15 amps. It features a maximum gain of 5.38 and a high-power breakdown voltage of 200 volts. It also features an excellent thermal resistance of 0.57 degrees C/W, ensuring the device can run efficiently and reliably under a wide range of operating conditions.

The PD55015S-E is designed for a variety of applications, including high-efficiency power amplifiers in mobile broadband systems, and for class E amplifiers in cellular network base stations. It is also used in switch-mode power converters, as well as in radio frequency (RF) and radio frequency interference suppression.

The PD55015S-E has an internally compensated forward gate drive conductance, which allows it to remain in saturation for a wide range of gate voltage applications. The device also features low input capacitance and high input impedance, making it ideal for use in frequency converter applications.

In terms of its working principle, the PD55015S-E makes use of the built-in gate insulator to enable conduction between the source and drain. This provides the device with an extremely high switching speed, as well as low ON-resistance. The device also features a low gate charge, which helps reduce switching losses and improves system efficiency.

The PD55015S-E is one of the most versatile high power MOSFETs available in the industry, capable of achieving superior performance in RF, switching, and high-efficiency applications. Its high-voltage and drain current ratings, low thermal resistance, and low gate charge make it an ideal choice for RF and high-efficiency applications.

The specific data is subject to PDF, and the above content is for reference

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