PD55025TR-E Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	500MHz
Gain:	14.5dB
Voltage - Test:	12.5V
Current Rating:	7A
Noise Figure:	--
Current - Test:	200mA
Power - Output:	25W
Voltage - Rated:	40V
Package / Case:	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:	PowerSO-10RF (Formed Lead)
Base Part Number:	PD55025

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The PD55025TR-E is a single-ended common-source RF amplifier, operated in the range of 10 MHz to 5 GHz. It is comprised of an N-channel MOSFET, manufactured with a 0.18 μm CMOS process. It has a maximum gain of 30 dB and a maximum output power of 10dBm at 1 dB gain compression point. The PD55025TR-E is designed to be used in a variety of applications such as cellular phones, base station amplifiers, and automotive applications.The PD55025TR-E amplifier works on the principle of RF power amplification. In simple terms, it takes in the weak RF signal, amplifies the power to a higher level, and then outputs the higher power signal. The power amplification is achieved by using a transistor, usually a MOSFET in this case. The voltage applied to the gate of the MOSFET changes the resistance between the source and the drain, which in turn causes a change in the gain of the amplifier. The PD55025TR-E uses N-channel MOSFETs, which require a positive gate voltage to turn it on. Thus, when the gate voltage is increased, the resistance between the source and the drain decreases, resulting in increased current flow, which in turn increases the power of the amplified signal.The PD55025TR-E is designed to be used in a variety of applications, ranging from cellular phones and base station amplifiers to automotive applications. It has been designed with a 0.18 micron CMOS process and features a maximum gain of 30 dB, a maximum output power of 10dBm at 1dB gain compression point. It also has built-in transmitter level control and linearity improvement.The PD55025TR-E is a compact and cost-effective solution for applications where very high gain and output power are required. It is ideal for applications such as base station amplifiers, wireless communications systems, broadcast and mobile television transmission systems, automotive applications, and data communication systems.The PD55025TR-E is designed for operation in the range of 10 MHz to 5GHz and can be used in various modes of operation such as single-ended, low power, and higher power amplifiers. The PD55025TR-E also has excellent reverse isolation, which reduces the effects of intermodulation distortion. The amplifier also features on-chip temperature compensation, temperature controlled biasing, and wideband control of gain.The PD55025TR-E is optimized to deliver superior performance in terms of gain, linearity, noise, and power efficiency. The high gain, low noise and excellent linearity make it an ideal choice for a variety of applications. The PD55025TR-E is also designed for ease of use and compatibility with other circuit designs. The amplifier is designed for easy integration with other systems and has a small package size and low power consumption.The PD55025TR-E is an ideal choice for applications requiring a high gain, low noise and excellent linearity. Its 0.18 μm CMOS process, high gain, and maximum output power make it an economical solution for a variety of RF amplifier applications. With its high performance and ease of use, the PD55025TR-E can be used in a variety of applications with maximum efficiency and minimum cost.

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