Allicdata Part #: | 497-6717-5-ND |
Manufacturer Part#: |
PD55035-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | FET RF 40V 500MHZ PWRSO-10 |
More Detail: | RF Mosfet LDMOS 12.5V 200mA 500MHz 16.9dB 35W Powe... |
DataSheet: | PD55035-E Datasheet/PDF |
Quantity: | 426 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 500MHz |
Gain: | 16.9dB |
Voltage - Test: | 12.5V |
Current Rating: | 7A |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 35W |
Voltage - Rated: | 40V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Supplier Device Package: | PowerSO-10RF (Formed Lead) |
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PD55035-E Application Field and Working Principle
The PD55035-E is a Fairchild\'s MOSFET RF transistor which has been designed for operation in the high frequency range. It has a high power output capability and a maximum blocking voltage of 40V, allowing it to be used in radios, mobile power amplifiers, mobile radios, and televisions, among other applications. It is available in a variety of packages, making it easily integrated into a wide range of devices.
The PD55035-E is a MOSFET transistor, which stands for metal-oxide-semiconductor field effect transistor. The MOSFET has several advantages over the traditional bipolar junction transistors, making it ideally suited for high-frequency radio applications. The advantages include reduced noise, low on-state impedance, fast switching speeds, and low power dissipation.
This transistor operates with an N-Channel junction and an insulated gate, hence its name. A bias voltage is applied to the gate, and this voltage is used to alter the electrical behavior of the transistor. It is through this process that the MOSFET can be operated as an amplifier, allowing it to drive signals with a high level of accuracy and signal fidelity. It is also possible to adjust the gain and bias of the transistor, allowing for more efficient operation.
The working principle of the PD55035-E is based on how the electric field is affected by the gate voltage. When a voltage is applied to the gate, it closes the N-Channel and drains the electrons away from the channel. As the electron flow away from the channel, the resistance of the channel increases, thus allowing the voltage to be somewhat amplified within the transistor.
The PD55035-E has a power efficiency of up to 75%, making it an ideal choice for applications which require higher levels of power efficiency, such as RF transmitters. It is also able to handle high currents of up to 1.25A, making it suitable for high-load applications. Furthermore, its design allows for maximum practical output power of 30W.
The PD55035-E is a high-performance MOSFET transistor designed to meet the needs of radio, television, and other wireless applications. It offers excellent signal fidelity and power efficiency while still being relatively easy to integrate into an existing system. Its excellent signal-handling capability ensures that it is a suitable choice for use in demanding applications, making it a reliable and cost effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PD55008-E | STMicroelect... | -- | 405 | FET RF 40V 500MHZ PWRSO10... |
PD55015-E | STMicroelect... | -- | 295 | FET RF 40V 500MHZ PWRSO-1... |
PD55025S-E | STMicroelect... | 19.85 $ | 229 | FET RF 40V 500MHZ PWRSO10... |
PD55003L-E | STMicroelect... | -- | 3000 | TRANSISTOR RF 5X5 POWERFL... |
PD55003-E | STMicroelect... | -- | 700 | FET RF 40V 500MHZ PWRSO10... |
PD55008L-E | STMicroelect... | -- | 1000 | TRANSISTOR RF 5X5 POWERFL... |
PD55025TR-E | STMicroelect... | 14.2 $ | 1000 | TRANS RF N-CH FET POWERSO... |
PD55035-E | STMicroelect... | -- | 426 | FET RF 40V 500MHZ PWRSO-1... |
PD55008S-E | STMicroelect... | 10.89 $ | 67 | FET RF 40V 500MHZ PWRSO10... |
PD55015TR-E | STMicroelect... | 10.12 $ | 1000 | TRANS RF N-CH FET POWERSO... |
PD55003TR-E | STMicroelect... | -- | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55003S-E | STMicroelect... | 6.43 $ | 1000 | FET RF 40V 500MHZ PWRSO10... |
PD55008TR-E | STMicroelect... | -- | 1000 | TRANSISTOR RF POWERSO-10R... |
PD55015STR-E | STMicroelect... | 10.12 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55015S-E | STMicroelect... | 10.63 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55025-E | STMicroelect... | 14.91 $ | 1000 | FET RF 40V 500MHZ PWRSO10... |
PD55035STR-E | STMicroelect... | 16.39 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55035S-E | STMicroelect... | 17.23 $ | 1000 | FET RF 40V 500MHZ PWRSO10... |
PD55003 | STMicroelect... | 0.0 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55003S | STMicroelect... | 0.0 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55003STR-E | STMicroelect... | -- | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55008 | STMicroelect... | -- | 1000 | FET RF 40V 500MHZ POWERFL... |
PD55008STR-E | STMicroelect... | 0.0 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55008TR | STMicroelect... | 0.0 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55025 | STMicroelect... | 0.0 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
PD55025STR-E | STMicroelect... | 0.0 $ | 1000 | FET RF 40V 500MHZ PWRSO-1... |
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