PD55015STR-E

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PD55015STR-E is a MOSFET type power RF transistor capable of handling relatively high non-saturated drain-source current. This transistor is designed primarily for wideband amplifiers and RFl switching power applications. Its features include low noise, moderate gain, and high reliability. So it can be used in a wide range of RF and microwave applications.

The PD55015STR-E application field includes telecommunications, mobile devices, Wi-Fi electronics, direct broadcast systems, radio transmitting and receiving equipment, and otherwise anything requiring high frequency operation. As an RF power transistor, it can be used to provide power amplification up to 15 Watts in the frequency range of 200MHz to 6GHz. Moreover, due to its high frequency performance and robust structure, it is able to deliver 3 Watts at 2GHz and 5 Watts at 1GHz.

The PD55015STR-E is composed of six terminals, including a gate, a source, a drain, two tabs, and a flange. As a type of MOSFET, the PD55015STR-E works according to the principle that a voltage applied to the gate treated as a capacitor, will store electrical charge in the MOSFET channel, thus providing a current flow through the drain and source terminals. This transistor works in two different operative areas: the linear and the saturated region. In the linear region, the drain current increases linearly with higher drain – source voltages. This is due to the increased electron flow through the channel thanks to the attraction force at greater voltage. In the saturated region, the drain current reaches a maximum, and further increasing of the voltage has no effect on the current. When the drain to source voltage is high enough, the electron flow is considered to be saturated.

The PD55015STR-E features high reliability, low noise, and low power consumption as compared to other transistors. It is capable of functioning with a breakdown voltage of -14V to 6V, making it ideal for high power RFI applications. It can handle a peak current of 150A and an average drain current of 15A with an operating temperature ranging between -55°C to +150°C.

Overall, the PD55015STR-E is an excellent RF power transistor, suitable for a wide range of applications due to its low power consumption, high frequency performance, robust structure, and high reliability. With its ability to deliver power amplification up to 15 Watts in the frequency range of 200MHz to 6GHz, it is a valuable device for telecommunications, mobile devices, Wi-Fi electronics, direct broadcast systems, and radio transmitting and receiving equipment.

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