PD55008TR-E Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD55008TR-E is a field effect transistor (FET) that has been designed specifically for use in radio frequency (RF) applications. It is an excellent choice for those desiring a robust yet affordable FET that is capable of handling the higher frequencies associated with most RF applications.The PD55008TR-E is an n-channel enhancement-type FET that is capable of operating at a wide range of frequencies, from 50 MHz up to 1000 MHz. It is also a good choice for those needing a high level of power handling capability, as it can supply up to 5 watt of continuous RF power. Additionally, it has a relatively low on-resistance when compared to other FETs, making it a good fit for power efficient applications. The PD55008TR-E is an excellent choice for those needing a high voltage FET with a good power handling capability. It operates with an acceptable gate-source voltage of up to 30 volts and an optimum gate-source threshold of 4 volts. The PD55008TR-E also excels in its gate protection capabilities, featuring an insulated gate protection diode (IGPD) for protection against voltage transients and other high voltage damage.In order to understand how the PD55008TR-E works, it is helpful to consider its basic working principle. Like all FETs, the PD55008TR-E is a three-terminal solid-state device. The three terminals are the source, gate, and drain. The source is the incoming electrical current while the gate controls the amount of current allowed to pass through. When the gate is opened, the current is allowed to flow through the source and drain. The gate is then closed and the current is prevented from flowing, essentially turning off the signal. This is known as the enhancement-type of operation and is commonly used in most FETs.The PD55008TR-E is designed to work in the high-frequency range and is capable of operating up to 1000 MHz. This makes it an excellent choice for radio and wireless applications. The PD55008TR-E is also able to handle up to 5 watts of continuous RF power, making it a great choice for applications requiring high power handling capabilities. The PD55008TR-E also offers a high level of gate protection with its IGPD feature. This feature protects against voltage transients and other high-voltage damage in extreme conditions. The PD55008TR-E also comes with a wide range of package options, allowing users to choose the most appropriate size and design for their application. The PD55008TR-E is a robust, high-performance FET that is well suited for use in RF applications. Its wide range of operating frequencies and excellent power handling capability make it an excellent choice for those needing a capable and powerful FET for their applications. Its gate protection feature also adds an additional layer of protection for users, further making the PD55008TR-E an even more attractive option.

The specific data is subject to PDF, and the above content is for reference