PD55035STR-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	500MHz
Gain:	16.9dB
Voltage - Test:	12.5V
Current Rating:	7A
Noise Figure:	--
Current - Test:	200mA
Power - Output:	35W
Voltage - Rated:	40V
Package / Case:	PowerSO-10 Exposed Bottom Pad
Supplier Device Package:	PowerSO-10RF (Straight Lead)

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The PD55035STR-E is a special type of field effect transistor (FET) designed for radio-frequency (RF) applications. It is a dual n-channel enhancement mode device, with an enhancement mode threshold voltage of -2V, an on-state resistance of 0.3ohm and a maximum DMOS gate to source breakdown voltage of -20V.A field effect transistor is a three-terminal electronic component, similar in many ways to a conventional transistor, but with several key differences. Among other features, FETs are voltage-controlled, unlike conventional transistors which are current-controlled. As such, they are more capable of handling small input signals as well as high frequencies, making them ideal for RF applications.The PD55035STR-E works by using a gate voltage to control the current flowing between its source and drain. This allows the device to function as an amplifier, switch, or even a signal mixer.When no gate voltage is applied, the PD55035STR-E behaves like an open switch, allowing no current to flow between its source and drain. When a negative gate voltage is applied, the source-drain channel is activated and current is allowed to flow. This activation can be controlled by adjusting the gate voltage, making the PD55035STR-E a voltage-controlled device.Aside from its amplifier/switch/mixer functions, the PD55035STR-E is also notable for its exceptional power handling capability. With a maximum drain-source voltage of -55V and a maximum drain-source current of 500mA, the PD55035STR-E can provide high power switching and amplification.The PD55035STR-E can also be used in a wide variety of applications, including power supplies and switching power converters. The device is an ideal choice for applications requiring low-noise, low-distortion signal transmission, such as high-frequency telecommunications and optical systems.Finally, the PD55035STR-E is also capable of performing in extreme conditions. It has an operating temperature range of -55°C to +125°C, making it ideal for use in harsh environments.In summary, the PD55035STR-E is a dual n-channel enhancement mode FET designed for radio-frequency applications. It works by using a gate voltage to control the current between its source and drain, making it a voltage-controlled device. With its high power handling capability, low noise/distortion characteristics, and wide operating temperature range, the PD55035STR-E is an ideal choice for many high-frequency and extreme applications.

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