PD55008S-E

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PD55008S-E is a silicon field-effect transistor (FET). It is a type of transistor widely used in different applications due its small size, high speed, low power consumption, and noise immunity. This device is perfect for low-power wireless applications since its low input capacitance and low on-resistance characteristics provide excellent power efficiency.

This particular FET contains dual N-channel enhancement mode transistors and is highly suitable for communication applications. It can be used as a RF amplifier, RF switch, mixer and as an oscillator. The device includes an integrated logic level gate, allowing the device to be used with no external base bias resistors.

The device is provided in a low-cost, miniature surface-mount package (1.2mm x 1.7mm x 0.6mm). With its minimized footprint, this FET fully complies with the requirements of mobile and consumer applications.

PD55008S-E is made up of two identical N-channel enhancement-mode power field effect transistors. This device combines two transistors in a single, space-saving package. Furthermore, these transistors can be operated separately, providing flexibility and efficiency. With two transistors in one package, the device provides higher gain, lower power consumption and improved thermal sensitivity. The total input capacitance is only 150pF, resulting in an improved switching speed.

The working principle of the PD55008S-E is based on a phenomenon known as electrostatic detection. By applying a voltage to a metal oxide gate, a metal-oxide-semiconductor (MOS) field-effect device electrically isolates its channel from the surroundings by using an induced electric field. In a depletion-mode FET, the channel is normally "on" (in the form of a conductive path), while in the case of an enhancement-mode FET, the channel is normally "off". When a positive voltage is applied to PD55008S-E’s gate, the N-channel turns on and can allow current to flow from source to drain. The device can be used as an amplifier, switch, mixer, and oscillator by controlling the gate voltage.

The PD55008S-E’s maximum drain-source breakdown voltage (BVDSS) is listed as 8V and its drain-source on-resistance is listed as 22.3mΩ. The gate-source breakdown voltage (BVGSO) is listed as 0.5V and its gate-source on-resistance is listed as 0.02mΩ. Maximum drain-source voltage is 6V and the device can handle up to -2.5 V to +7 V of control voltage. The maximum drain current is rated at 300mA and the device has a typical turn-on time of 50ns.

PD55008S-E is perfect for use in low-power wireless applications due to its low input capacitance and low on-resistance characteristics. The device can be used as an amplifier, switch, mixer, and oscillator by controlling the gate voltage, making it suitable for communication applications. Furthermore, its minimized footprint allows for use in mobile and consumer applications.

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