PD55025S-E

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	500MHz
Gain:	14.5dB
Voltage - Test:	12.5V
Current Rating:	7A
Noise Figure:	--
Current - Test:	200mA
Power - Output:	25W
Voltage - Rated:	40V
Package / Case:	PowerSO-10 Exposed Bottom Pad
Supplier Device Package:	PowerSO-10RF (Straight Lead)
Base Part Number:	PD55025

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PD55025S-E application field and working principleThe PD55025S-E is a silicon power MOSFET device which belongs to the Transistors - FETs, MOSFETs - RF family. This device is well known for its high reliability and robustness. Its main application areas include mobile radio communications, general-purpose RF amplifiers, DC/DC converters, high power switching and low noise receiver amplifiers.The working principle of PD55025S-E is based on the field-effect transistor (FET) mechanism. It consists of a source and a drain, which are connected to each other by an ohmic region called the channel. The gate terminals act as a control element for the device, and the junction capacitance between the gate and the drain establishes a gate-drain capacitance (Cgd) which modulates the conductivity of the device. The gate-source capacitance (Cgs) also modulates the conductivity as a function of the gate voltage. In order to maximize performance and minimize power losses, the parallel gate-drain and gate-source capacitances must be chosen correctly.When applying a voltage between the gate and source, the PD55025S-E device forms an electric field between the gate and channel. This electric field modulates the conductivity in the channel by creating a depletion layer. The electric field creates a drift of charge carriers between the source and the drain which changes with the magnitude of the gate voltage. This drift of carriers causes a change in the device resistance that can be used to control the current in a circuit.The PD55025S-E can be used in a variety of applications to control current flow in circuits. It can be used as an amplifier due to its high transconductance and low gate-source capacitances. The device also has a low on-state resistance, making it ideal for power supplies and switching applications. It also has a high input impedance, which is ideal for low-noise receiver amplifier circuits.The PD55025S-E is particularly useful in RF applications because of its high power handling capability and its fast turn-on time. It is well suited for use in mobile radio communications, high-power amplifier systems, DC/DC converters, and high-frequency switching circuits.Due to its high reliability, robustness, and good performance characteristics, the PD55025S-E is an attractive choice for a wide range of applications and makes it an ideal choice for a variety of electronic systems. Its high power handling and fast turn-on time make it a reliable choice for RF applications and its low gate-source capacitances and high transconductance make it an attractive choice for amplifier design. In addition, its high input impedance makes it a great choice for low-noise receiver amplifier circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description