PDTA113EMB,315

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PDTA113EMB,315 Application Field And Working Principle

The PDTA113EMB,315 is a single, pre-biased bipolar junction transistor (BJT). It is designed for power line communication circuits, where large-current bipolar transistors are required for reliable communication. The device has an integrated, fast-switching, high-efficiency power device. It is capable of switching current up to 3.5A at a voltage of 315V and with a maximum collector-emitter voltage of 1500V.

Application Field

The PDTA113EMB,315 is designed for use in power line communication circuits. This device is suitable for use in low-voltage, high-current applications such as automation, process control and high-power switching circuits. These circuits are typically capable of switching and controlling a wide range of DC and AC input voltage levels. Examples of applications include high-speed switching, power factor correction, power control systems, pulse-width modulated (PWM) circuits, and reactive power compensation.

The device is also used in industrial electronic equipment, such as process and heating controllers, electric motors, UPS systems, induction heating equipment and power supplies.

Working Principle

The PDTA113EMB,315 is a three-terminal bipolar power transistor. It consists of an N-type base region, an N-type collector region and a P-type emitter region. When a bias voltage is applied between the base and emitter (BE junction), electrons are injected from the base into the P-type emitter region, allowing current to flow from the collector to the emitter. When the current is switched off, the depletion voltage between the collector and the emitter is still present, preventing the reverse current flow.

The device is pre-biased at the start of the switching cycle, meaning that it is already in a conducting state before the switch is turned on. This reduces the switching time and allows higher switching rates. The device also has a low saturation voltage and a low switching voltage, both of which reduce power loss. The device is also designed for fast switching and has a fast turn-off time, reducing switching losses further.

Conclusion

The PDTA113EMB,315 is a single, pre-biased bipolar power transistor with an integrated, fast-switching, high-efficiency power device. It is suitable for use in a wide range of applications, including power line communication, automation, process control and high-speed switching. It has a fast switching time and low switching loss, and it is pre-biased to reduce the switching time.

The specific data is subject to PDF, and the above content is for reference