PDTA124EU,115 Allicdata Electronics

PDTA124EU,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1694-1-ND

Manufacturer Part#:

PDTA124EU,115

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA124EU,115 datasheetPDTA124EU,115 Datasheet/PDF
Quantity: 2318
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.11340
10 +: $ 0.10584
100 +: $ 0.05746
500 +: $ 0.03537
1000 +: $ 0.02411
Stock 2318Can Ship Immediately
$ 0.13
Specifications
Resistor - Base (R1): 22 kOhms
Supplier Device Package: SOT-323-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Resistor - Emitter Base (R2): 22 kOhms
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Cut Tape (CT) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single, Pre-Biased are a kind of transistor used for small-signal switching and amplifying purposes. The PDTA124EU 115 is a PNP type of transistor. It is a three-terminal, semiconductor device which is usually used for low current and low voltage applications.

The PDTA124EU 115 transistor consists of three terminals; the base (B), the collector (C) and the emitter (E). The base and the emitter are the control terminals, where an input voltage is applied in order to control the current flowing through the collector. The collector is used to “collect” electrons from the emitter. It acts as a pathway for the electrons to reach their destination in the form of an output voltage.

The working principle of the PDTA124EU 115 is based on the idea of a PNP type bipolar junction transistor. In its operation, the base of the transistor is used as the control terminal, and an input voltage is applied to it. This input voltage provides a current flow between the base and the emitter. The amount of current that flows from the base to the emitter is determined by the magnitude of the input voltage. If a higher input voltage is applied, then more current will flow through the base and to the emitter. On the other hand, if a lower input voltage is applied, then less current will flow through the base and to the emitter.

The collector is used to collect the electrons that have been emitted by the emitter. The amount of current collected by the collector will depend on the magnitude of the input voltage applied at the base. In other words, if a higher input voltage is applied at the base, then more electrons will be collected by the collector, and vice versa. The collector voltage is the output voltage of the PDTA124EU 115 transistor, and this is dependent on the amount of current collected by the collector.

Due to its high gain, the PDTA124EU 115 transistor is often used for low power applications. It can be used as an amplifier, or a switch for various applications in devices such as audio amplifiers, voltage regulators, radios and other electronic devices. Furthermore, it can also be used for application such as analog signal processing, signal sensing and signal conditioning.

To conclude, the PDTA124EU 115 is a PNP type bipolar junction transistor that is used for a variety of low power applications. It has three terminals; the base, the collector and the emitter, which work together to amplify or switch signals in various electronic devices. Moreover, due to its high gain, the PDTA124EU 115 is highly suitable for low power applications.

The specific data is subject to PDF, and the above content is for reference

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