PDTA144TU,115 Allicdata Electronics
Allicdata Part #:

1727-3028-2-ND

Manufacturer Part#:

PDTA144TU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA144TU,115 datasheetPDTA144TU,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01755
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTA144
Description

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The PDTA144TU,115 is a single bipolar junction transistor (BJT). It is pre-biased and designed for a variety of applications. The general purpose of the PDTA144TU,115 is as an amplifier, linear or switching voltage regulator, bridge driver, or as an analog or digital switch. It is ideal for applications like power supplies and virtual logic level adapters.

The PDTA144TU,115 operates from a 4.5 V to 40 V single supply voltage with a collector-emitter-saturation voltage of 1.4 V. It is housed in a hermetically sealed, leadless ceramic flatpack with a current gain of 115. It offers excellent thermal performance, improved thermal reliability, and low power consumption through the use of its dielectric isolation technology. This low power consumption also makes it very cost effective.

The maximum collector current of the PDTA144TU,115 is 10 A. Its maximum power dissipation is 1.5 W and its maximum storage temperature range is -40 to +85°C. Its total junction range is -55 to +150°C. This device is RoHS-complaint.

The working principle of the PDTA144TU,115 is based on the basic structure of a bipolar junction transistor. It is basically a three-terminal device that has three different regions - emitter, base and collector - connected to each other internally. The emitter and collector region are designed to possess different dopants in order to create a voltage dependent region through which free electrons are diverted from the emitter to the collector.

The regions in the PDTA144TU,115 are controlled by the base terminal and the applied voltage can alter their size, in turn altering their conductivity. Depending on the value of the voltage, either electrons from the emitter region or from the collector region are drawn to the base region. Electrons from the collector region are transferred back to the emitter region and the device works as an amplifier. In a linear operation, the voltage difference between the base and the emitter terminal decreases with the increasing base current, reducing the current gain of the device. In the switching operation, when the voltage at the base terminal is increased, the current gain of the device is increased, allowing the device to act as a switch.

The PDTA144TU,115 can be used in many applications such as voltage regulators, amplifiers, oscillators, oscillator generators and much more. It can be used to regulate the output voltage or current of a power supply and it can be used as a bridge driver in applications like motor control or motor speed control. It can also be used as a switch in applications such as digital logic circuits or analog circuits. And it can also be used as an amplifier for audio amplification or to amplify signals from various sources such as sensors.

In summary, the PDTA144TU,115 is a single bipolar junction transistor (BJT) is pre-biased and designed for a variety of applications. It has excellent thermal performance, improved thermal reliability and low power consumption which makes it a cost-effective option. The working principle of the PDTA144TU,115 is based on the basic structure of a bipolar junction transistor and it can be used in many applications such as voltage regulators, amplifiers, oscillators, oscillator generators, digital logic circuit and much more.

The specific data is subject to PDF, and the above content is for reference

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