PDTA143ZT,235 Allicdata Electronics
Allicdata Part #:

PDTA143ZT,235-ND

Manufacturer Part#:

PDTA143ZT,235

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA143ZT,235 datasheetPDTA143ZT,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01717
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PDTA143
Description

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PDTA143ZT,235 Application Field and Working Principle

The PDTA143ZT,235 is a single, pre-biased Bipolar Junction Transistor (BJT) commonly used for switching, amplification, and selection purposes. This device is designed to switch on/off by an input signal, enabling high-speed switching with a low voltage drop.

Overview

The PDTA143ZT,235 comes with a pre-biased collector voltage, and can be used as a high-speed switch or as a voltage regulator. The low collector voltage is ideal for applications that require a low power consumption or extended duration of one. The IC includes a base drive circuit, as well as base-drive pulls that prevent accidental turn-on of the device when an input signal is applied. Additionally, the package includes an integrated protection circuit, which allows the device to operate safely in the event of a short-circuit, over-voltage, or current flow.

Characteristics

The PDTA143ZT,235 offers a wide range of characteristics that are taken into consideration when selecting the type of BJT. The forward breakdown voltage and the collector-emitter leakage current are both needed to determine how best to level up and down this device. The PDTA143ZT,235 has a collector-emitter breakdown voltage of 5V, a leakage current of 40 mA, and a saturation voltage of 1.2V. In addition, the device has a typical turn-on delay of 20ns, and a rise time of 10 ns.

Applications

The PDTA143ZT,235 functionally combines switching, amplification, and selectivity. This makes it suited for a variety of applications, such as power supply systems, audio amplifiers, and current switching applications. The PDTA143ZT,235 offers stable performance when used at high frequency, and can be used to regulate output currents from low to medium levels. Its pre-biased collector voltage limits current to threshold levels, thereby allowing for greater control of power delivery and energy efficiency.

Working Principle

The PDTA143ZT,235 utilizes the principle of a Bipolar Junction Transistor (BJT). At the most basic level, a BJT is an active three-terminal semiconductor device in which current flows between two resistors. The PDTA143ZT,235 consists of three terminals, namely the emitter, the collector, and the base. The emitter is the input where the voltage is applied, and the collector is the output where the current is returned. The base is used as the control terminal, where a small amount of current turns on and off the flow of current between the emitter and the collector.

When a voltage is applied to the base terminal of the PDTA143ZT,235, it allows for current to flow from the emitter to the collector. This enables amplification, selection, and switching, depending on the size of the current. In addition, the pre-biased collector voltage of the PDTA143ZT,235 allows for the regulation of output current from low to medium levels.

Conclusion

The PDTA143ZT, 235 is a single, pre-biased Bipolar Junction Transistor (BJT). This device is designed to switch on/off by an input signal and can be used to amplify, select, and switch current. The PDTA143ZT,235 has a wide range of characteristics, including a low collector voltage, a collector-emitter breakdown voltage of 5V, and a typical turn-on delay of 20ns. The PDTA143ZT,235 is suitable for a variety of applications, such as power supply systems, audio amplifiers, and current switching applications. The PDTA143ZT,235 works on the principles of a Bipolar Junction Transistor, using three terminals where an input voltage applied to the base terminal will switch on and off the current flowing from the emitter to the collector.

The specific data is subject to PDF, and the above content is for reference

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