Allicdata Part #: | PDTA114YUF-ND |
Manufacturer Part#: |
PDTA114YUF |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PDTA114YU/SOT323/SC-70 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA114YUF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01561 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 180MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
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A PDTA114YUF is a single, pre-biased bipolar junction transistor (BJT). It is mainly used in applications that require low-power operation, such as logic level translation, as well as higher impedance levels, particularly in low-impedance circuits. The device has a well-defined working principle, which makes it ideal for many different applications.
In a standard BJT, the base-emitter junction acts as the main switching element, allowing current to flow from the emitter to the base. The amount of current flowing from the base to the collector is determined by the size of the base-collector junction, and will be controlled by the current flowing through the base-emitter junction.
A PDTA114YUF is constructed using a single-piece semiconductor substrate, which is divided into two parts: an upper (base) and a lower (collector) region. The upper region contains two transistors, which are directly connected to the base, while the lower region contains one transistor, connected directly to the collector. The PDTA114YUF is pre-biased, meaning that it requires no additional bias voltage or current to operate. Instead, it relies on the characteristics of its underlying semiconductor substrate to ensure low-power consumption and a high impedance level. The device is able to achieve this by utilizing the same principle as a single-piece BJT.
In operation, the PDTA114YUF works by utilizing an extremely small voltage difference between the base and the collector. This voltage difference, known as the voltage headroom, is created by applying a bias voltage to the base, which is then maintained by a current source. This current source is in turn supplied with the current flowing through the base-emitter junction. As a result, the PDTA114YUF is able to maintain a relatively accurate voltage headroom, allowing it to remain in a constant operating state.
The PDTA114YUF is also characterized by its low-power consumption and high impedance level, as well as its wide operating temperature range. This makes it ideal for many applications, particularly in automotive and industrial systems. For example, the device can be used in logic level translation, buffer circuits, and high-impedance circuits. Additionally, it can be used in voltage-controlled current sources, analog-to-digital converters, and voltage feedback amplifiers.
In summary, the PDTA114YUF is a single, pre-biased bipolar junction transistor designed for low-power operation. It utilizes the same principle as a single-piece BJT to achieve a low-power consumption and high impedance level. In addition, the device can also be used in a wide range of applications, making it an ideal choice for many different systems.
The specific data is subject to PDF, and the above content is for reference
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