
Allicdata Part #: | PDTA113ET,215-ND |
Manufacturer Part#: |
PDTA113ET,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02189 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PDTA113 |
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A pre-biased single bipolar junction transistor (BJT), commonly referred to as a PDTA113ET,215, is a three-terminal device commonly used in analog circuit designs. It is widely used for amplifying low-frequency signals, such as those produced by microphones, and can also be used for high frequency applications such as oscillators. The main purpose of the PDTA113ET,215 is to control the power of a signal or current.
The PDTA113ET,215 BJT consists of three terminals, the collector, base and emitter. The collector and emitter are the parts of the transistor to which the current flows, with the base controlling the amount of current that can pass through the other two terminals. In a typical use case, the base is pre-biased at a certain amount of current or voltage, and then the current or voltage of the collector and emitter is adjusted using the base.
One of the main advantages of the PDTA113ET,215 is that it has a relatively low input capacitance. This is important for high frequency applications, because it allows a shorter propagation delay and more reliable switching. The lower input capacitance also helps to reduce noise in the circuit, since high frequency noise signals can be easily misread.
In order to take advantage of the low input capacitance, the PDTA113ET,215 uses a technology called “come-up-renormalization”, which carefully adjusts the base current or voltage to achieve a desired collector current or voltage. This technology was first developed by Fairchild Semiconductor and is now used in many of the current BJT devices. Through this come-up-renormalization technology, the device can achieve an accurate high speed switching operation with a very low power dissipation.
In addition to its low input capacitance, the PDTA113ET,215 also includes some built-in protection circuits. These protection circuits prevent the transistor from being damaged during over-current or over-voltage conditions, and they are especially useful during high frequency applications.
The PDTA113ET,215 is a versatile BJT that can be used in a variety of applications, from analog audio amplifiers to radio transmitters. Its low input capacitance and built-in protection circuits make it an ideal choice for high frequency applications, and its cost-effectiveness makes it popular for cost-sensitive projects. With its many advantages, the PDTA113ET,215 BJT is an excellent choice for any circuit design project.
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