PDTA113ET,215 Allicdata Electronics
Allicdata Part #:

PDTA113ET,215-ND

Manufacturer Part#:

PDTA113ET,215

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA113ET,215 datasheetPDTA113ET,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02189
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PDTA113
Description

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A pre-biased single bipolar junction transistor (BJT), commonly referred to as a PDTA113ET,215, is a three-terminal device commonly used in analog circuit designs. It is widely used for amplifying low-frequency signals, such as those produced by microphones, and can also be used for high frequency applications such as oscillators. The main purpose of the PDTA113ET,215 is to control the power of a signal or current.


The PDTA113ET,215 BJT consists of three terminals, the collector, base and emitter. The collector and emitter are the parts of the transistor to which the current flows, with the base controlling the amount of current that can pass through the other two terminals. In a typical use case, the base is pre-biased at a certain amount of current or voltage, and then the current or voltage of the collector and emitter is adjusted using the base.


One of the main advantages of the PDTA113ET,215 is that it has a relatively low input capacitance. This is important for high frequency applications, because it allows a shorter propagation delay and more reliable switching. The lower input capacitance also helps to reduce noise in the circuit, since high frequency noise signals can be easily misread.

In order to take advantage of the low input capacitance, the PDTA113ET,215 uses a technology called “come-up-renormalization”, which carefully adjusts the base current or voltage to achieve a desired collector current or voltage. This technology was first developed by Fairchild Semiconductor and is now used in many of the current BJT devices. Through this come-up-renormalization technology, the device can achieve an accurate high speed switching operation with a very low power dissipation.


In addition to its low input capacitance, the PDTA113ET,215 also includes some built-in protection circuits. These protection circuits prevent the transistor from being damaged during over-current or over-voltage conditions, and they are especially useful during high frequency applications.


The PDTA113ET,215 is a versatile BJT that can be used in a variety of applications, from analog audio amplifiers to radio transmitters. Its low input capacitance and built-in protection circuits make it an ideal choice for high frequency applications, and its cost-effectiveness makes it popular for cost-sensitive projects. With its many advantages, the PDTA113ET,215 BJT is an excellent choice for any circuit design project.

The specific data is subject to PDF, and the above content is for reference

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