Allicdata Part #: | PDTA114TMB,315-ND |
Manufacturer Part#: |
PDTA114TMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA114TMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 180MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Base Part Number: | PDTA114 |
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The PDTA114TMB,315 is a single bipolar junction transistor (BJT) that is bias-dependent. The device is a small package and it has a relatively low power dissipation. It is a pre-biased version of the PDTA114TMB,315. The pre-biased version has an additional bias current supplied by a source, which reduces the temperature dependent junction offset voltage.
A bipolar transistor is a device made of two p-n junctions that are biased in opposite directions. The current through the device is determined by the difference between the two junctions, known as the base-emitter voltage. When the base-emitter voltage is large enough, the current injection from the base to the collector becomes significant, providing amplification of the current from the collector to the emitter.
The PDTA114TMB,315 is pre-biased to provide a variety of solutions that can improve efficiency and linearity of the output stage. It can be used as an output stage amplifier, but it also has applications in voltage regulation, switching and signal processing. In an amplifier circuit, the pre-biased transistor can be used to reduce power consumption by providing a fixed collector-emitter bias current even when the base voltage varies. This can reduce heat loss and avoids waiting time associated with conventional biasing methods.
The PDTA114TMB,315 has a maximum collector-emitter saturation voltage of 5V, and has a maximum collector current of 1.7A. Its maximum power dissipated is 36W. It can be used in a wide range of applications, from simple switching circuits to linear regulation. Its low current consumption and high current capability make it an ideal device for switching and signal processing systems.
The working principle of the PDTA114TMB,315 is fairly simple. When the base voltage is below the base-emitter threshold voltage, the transistor remains off and no current flows through the collector and emitter. When the base voltage reaches the base-emitter threshold, the collector-emitter current increases exponentially, providing a low output impedance and a high current gain.
The PDTA114TMB,315 is an essential component for a variety of applications. It can be used to provide output stages in amplifiers and voltage regulators, as well as switching and signal processing applications. Its low power dissipation, high current capability and pre-bias feature, make the device an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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