PDTA124XK,115 Allicdata Electronics
Allicdata Part #:

PDTA124XK,115-ND

Manufacturer Part#:

PDTA124XK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA124XK,115 datasheetPDTA124XK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTA124
Description

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PDTA124XK,115 is a single, pre-biased transistor of the bipolar junction type (BJT). It is a general-purpose, low-power transistor used in high-frequency audio, video and signal processing circuits, and for power amplification and switching applications.

The PDTA124XK,115 is a highly stable, two-terminal device with low capacitances, which allows it to be used in circuits operating at very high frequencies. Its small size and light weight also make it suitable for applications where space and weight concerns are important.

The PDTA124XK,115 has a gate emitter voltage of 7V and a maximum PNP collector-emitter voltage of 40V. It is designed to operate at temperatures ranging from -55 degrees Celsius to 125 degrees Celsius, and its maximum current rating is 1.5A.

The PDTA124XK,115 features a current gain of around 100 and a switching speed of 1.7ns. Its high current gain ensures its ability to amplify signals accurately and precisely, with minimal distortion or noise. Additionally, its high switching speed allows it to be used in high speed switching applications.

The PDTA124XK,115 is constructed using a dielectric insulator and a pre-biased NPN collector construction. This pre-biased construction provides the device with its quick switching speed, while also allowing it to remain in a stable operating state when subjected to sudden changes in its operating conditions. The dielectric insulator helps to protect the device from extreme temperatures and helps to keep its internal structure intact.

The PDTA124XK,115 works by allowing current to flow between its collector and emitter terminals when its base terminal is supplied with a control voltage. The voltage applied to the base directly affects the current flowing through the device, and as such, it is used as a variable amplifier or switch in many circuits. When used as an amplifier, the device increases the magnitude of a signal while maintaining its shape and frequency. When used as a switch, it can be used to control the flow of current through a circuit by turning it on and off rapidly.

In conclusion, PDTA124XK,115 is a high-speed, pre-biased, low-power bipolar transistor. It is widely used in audio, video, and signal processing applications, and can be used as an amplifier or a switch. Its high current gain ensures accurate, low-noise amplification, while its high switching speed makes it suitable for high-frequency applications. Moreover, its pre-biased NPN collector construction provides excellent stability in sudden changes of its operating conditions.

The specific data is subject to PDF, and the above content is for reference

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