PDTA113EU,115

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Most transistor applications involve switching and amplifier applications. Transistors are versatile electrical components that can be classified in a few different ways: as unipolar transistors (e.g. field-effect transistors), bipolar transistors (e.g. Bipolar Junction Transistors or BJTs), or compound transistors (e.g. Darlington pairs). Of these, the most accessible and commonly used type is the BJT, and among these, the “single, pre-biased” type is the subject of this article.

The PDTA113EU-115 is a single, pre-biased NPN transistor that is part of Diodes Incorporated’s high-speed, high-voltage, switching and amplifier applications series. As a single, pre-biased transistor, it can take a low-current voltage (typically 0.75-2V) to trigger a high-current voltage (typically up to 240mA). The PDTA113EU-115 can be used for high-gain linear amplification and switching applications. It is particularly well-suited for use in power digital circuits, power supply and switching applications in consumer, automotive and industrial applications.

To understand why a single, pre-biased transistor like the PDTA113EU-115 is so valuable, it is important to understand what “pre-biased” means. Pre-biased transistors come with pre-defined resistors inside of the device that ensure that the emitter-base diode of the device is already conducting a current. This means that when a low-voltage current is supplied to the base terminal, it immediately triggers a large current through the collector-emitter junction and, consequently, the external load. This eliminates the need for a separate voltage-regulated or constant current source and simplifies the circuit design.

In order to understand the working principle of a pre-biased transistor, it helps to first explain the way it behaves differently from a non-pre-biased transistor. When a normal transistor is connected to a circuit, it will not switch on until the emitter-base diode has conducted enough current to cause the base-emitter junction to get inserted into conduction mode. This requires that a voltage much higher than the normal logic voltage (which is typically 0.75-2V) is supplied to the base-emitter junction of the transistor. This is a problem for low-voltage applications, as it is often not possible to supply the necessary voltage (consumer electronics set-ups, for example, typically operate on 5V).

In contrast, pre-biased transistors are able to start conducting current at a much lower voltage, because the base –emitter diode is already pre-biased and ready to conduct current. This allows the base-emitter junction to quickly enter into conduction mode and trigger a large current through the collector-emitter junction without requiring a large voltage, which makes them much more simple to design circuits with. With the PDTA113EU-115 in particular, the pre-biased current is 1.0mA and the minimum guaranteed DC current gain is 70.

The PDTA113EU-115 provides good electrical performance in terms of switching and amplification. It features a maximum collector-emitter voltage of 180V and a continuous collector current of 500mV. It has a fast switching time of 0.8ns and can handle a peak current of 500mA. It also features a low profile package and is low power consumption device.

In conclusion, the PDTA113EU-115 is an excellent choice for high-performance, single, pre-biased transistor applications. With its pre-biased design, fast switching time, and low voltage operation, it is a versatile and reliable choice for high-voltage power digital circuits and power supply and switching applications in consumer electronics, automotive, and industrial applications.

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