
Allicdata Part #: | PDTA113ZT,215-ND |
Manufacturer Part#: |
PDTA113ZT,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02189 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100mA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PDTA113 |
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PDTA113ZT,215 is a type of a pre-biased single bipolar junction transistor (BJT) used in various applications. This type of BJT is known as an NPN transistor, and is a type of BJT used in many different kinds of electronics devices and circuits.
A bipolar transistor, also known as a BJT, is a type of active component widely used in modern electronic equipment. This active component operates using the principles of electron charge and mobility, in which carriers of charge (electrons) move between two different conductors (the emitter and collector). The base is the region between the emitter and collector, and it controls the flow of electrons by changing the voltage on the base. This is what is referred to as "gating" or "biasing" -- it\'s how a bipolar transistor works and how it is able to control the current flowing through the device.
A single BJT has two terminals: the emitter and collector. The basic operation of a single BJT is to allow current to flow from the collector to the emitter when a voltage is applied to the base. The current flowing from the collector to the emitter is controlled by the biasing voltage applied to the base. This is how a single BJT is used to control or amplify a signal or voltage.
Pre-biased single BJTs are active semiconductor devices used in many digital electronics and communications applications. They are designed to provide an easy way to tailor the current flow through the transistor. A pre-biased single BJT is designed to provide an easier way to adjust the current flowing through the device without the need to understand the complicated biasing techniques that are associated with other transistors. For example, the PDTA113ZT,215 has a biasing voltage of 1.6V on the base terminal, which allows the current flow through the device to be quickly adjusted by simply adjusting the bias voltage.
Pre-biased single BJTs are also used in power circuits, such as those used to generate and control solar power for residential applications. In a solar power application, a pre-biased single BJT is used to generate a DC voltage from the solar cells, which then can be used to control other aspects of the circuit. This type of transistor is also used in circuit designs for AC power control, such as surge protection and motor control.
Another application for pre-biased single BJTs is in RF switching. RF switching is used in mobile phone and computer components to switch between various different frequency signals. It is also used in medical applications, such as MRI scanners, to switch between different frequency signals. The pre-biased single BJT can provide efficient and reliable switching of these frequencies.
PDTA113ZT,215 is an example of a pre-biased single BJT used in a wide range of applications. It is a useful active component used in many digital electronic devices and systems. From power circuits to RF switching, a pre-biased single BJT is an essential part of many different types of electronic equipment.
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